StrongIRFET IRFS7730-7PPbF Application HEXFET Power MOSFET Brushed motor drive applications V 75V DSS BLDC motor drive applications D R typ. Battery powered circuits 1.70m DS(on) Half-bridge and full-bridge topologies max 2.00m G Synchronous rectifier applications I 269A D (Silicon Limited) S Resonant mode power supplies I 240A D (Package Limited) OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC inverters Benefits Improved gate, avalanche and dynamic dV/dt ruggedness Fully characterized capacitance and avalanche SOA Enhanced body diode dV/dt and dI/dt capability Lead-free, RoHS compliant G D S Gate Drain Source Base Part Number Package Type Standard Pack Complete Part Number Form Quantity Tube 50 IRFS7730-7PPbF IRFS7730-7PPbF D2Pak-7PIN Tape and Reel Left 800 IRFS7730TRL7PP 8 300 I = 100A D Limited By Package 250 6 200 T = 125C J 4 150 100 2 50 T = 25C J 0 0 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175 T , Case Temperature (C) V Gate -to -Source Voltage (V) C GS, Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 7, 2014 R , Drain-to -Source On Resistance (m) D n S(o ) I , Drain Current (A) D IRFS7730-7PPbF Absolute Maximum Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 269 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 190 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 240 D C GS I Pulsed Drain Current 990 DM P T = 25C Maximum Power Dissipation 375 W D C Linear Derating Factor 2.5 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 175 T Storage Temperature Range STG C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Avalanche Characteristics Symbol Max. Units Parameter E 464 AS (Thermally limited) Single Pulse Avalanche Energy mJ E 897 AS (Thermally limited) Single Pulse Avalanche Energy I Avalanche Current A AR See Fig 15, 16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.40 R C/W JC Junction-to-Ambient 40 R JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 40 mV/C Reference to 25C, I = 1mA V /T D (BR)DSS J R Static Drain-to-Source On-Resistance 1.70 2.00 V = 10V, I = 100A DS(on) m GS D 2.20 V = 6.0V, I = 50A m GS D V Gate Threshold Voltage 2.1 3.7 V V = V , I = 250A GS(th) DS GS D I Drain-to-Source Leakage Current 1.0 A V = 75 V, V = 0V DSS DS GS 150 V = 75V,V = 0V,T =125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 1.9 G Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 93H, R = 50 , I = 100A, V =10V. Jmax J G AS GS I 100A, di/dt 1575A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS R is measured at T approximately 90C. J Limited by T , starting T = 25C, L = 1mH, R = 50 , I = 42A, V =10V. Jmax J G AS GS When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994.please refer to application note to AN-994: