Advanced Process Technology D Ultra Low On-Resistance V = 150V DSS Dynamic dv/dt Rating 175C Operating Temperature R = 0.166 DS(on) Fast Switching G Fully Avalanche Rated I = 12A D S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide TO-220AB acceptance throughout the industry. Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 12 D C GS I T = 100C Continuous Drain Current, V 10V 8.5 A D C GS I Pulsed Drain Current 48 DM P T = 25C Power Dissipation 80 W D C Linear Derating Factor 0.53 W/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy 130 mJ AS I Avalanche Current 7.2 A AR E Repetitive Avalanche Energy 8.0 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.9 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA www.irf.com 1 07/22/11 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 150 V V = 0V, I = 250 A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.20 V/C Reference to 25C, I = 1mA (BR)DSS J D 0.166 V = 10V, I = 7.2A GS D R Static Drain-to-Source On-Resistance DS(on) 0.184 V = 5.0V, I = 7.2A GS D 0.208 V = 4.0V, I = 6A GS D V Gate Threshold Voltage 1.0 2.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 8.3 S V = 25V, I = 7.2A fs DS D 25 V = 150V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 120V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 16V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -16V GS Q Total Gate Charge 35 I = 7.2A g D Q Gate-to-Source Charge 4.1 nC V = 120V gs DS Q Gate-to-Drain Mille) Charge 21 V = 5.0V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 7.4 V = 75V d(on) DD t Rise Time 45 I = 7.2A r D ns t Turn-Off Delay Time 38 R = 12, V = 5.0V d(off) G GS t Fall Time 36 R = 10.2, See Fig. 10 f D D Between lead, L Internal Drain Inductance 4.5 D nH 6mm (0.25in.) G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 775 V = 0V iss GS C Output Capacitance 140 pF V = 25V oss DS C Reverse Transfer Capacitance 70 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 12 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 48 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 7.2A, V = 0V SD J S GS t Reverse Recovery Time 160 240 ns T = 25C, I = 7.2A rr J F Q Reverse RecoveryCharge 810 1210 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Repetitive rating pulse width limited by Pulse width 300 s duty cycle 2%. max. junction temperature. ( See fig. 11 ) Starting T = 25C, L = 4.9mH Caculated continuous current based on maximum allowable J R = 25, I = 7.2A. (See Figure 12) junction temperature for recommended current-handling of the G AS package refer to Design Tip 93-4 I 7.2A, di/dt 100A/s, V V , SD DD (BR)DSS T 175C J 2 www.irf.com