PD - 94266 IRLR3714 SMPS MOSFET IRLU3714 HEXFET Power MOSFET Applications V R max I High Frequency Isolated DC-DC DSS DS(on) D Converters with Synchronous Rectification 20V 20m 36A for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low Gate Impedance Very Low R at 4.5V V DS(on) GS Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRLR3714 IRLU3714 Absolute Maximum Ratings Symbol Parameter Max. Units V Drain-Source Voltage 20 V DS V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V 36 D C GS I T = 70C Continuous Drain Current, V 10V 31 A D C GS I Pulsed Drain Current 140 DM P T = 25C Maximum Power Dissipation 47 W D C P T = 70C Maximum Power Dissipation 33 W D C Linear Derating Factor 0.31 W/C T , T Junction and Storage Temperature Range -55 to + 175 C J STG Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 3.2 JC C/W R Junction-to-Ambient 50 JA R Junction-to-Ambient (PCB mount) 110 JA Notes through are on page 10 www.irf.com 1 06/15/01IRLR3714/IRLU3714 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 20 VV = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.022 V/C Reference to 25C, I = 1mA (BR)DSS J D 15 20 V = 10V, I = 18A GS D R Static Drain-to-Source On-Resistance DS(on) m 21 28 V = 4.5V, I = 14A GS D V Gate Threshold Voltage 1.0 3.0 V V = V , I = 250A GS(th) DS GS D 20 V = 16V, V = 0V DS GS I Drain-to-Source Leakage Current DSS A 100 V = 16V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 200 V = 16V GS I GSS nA Gate-to-Source Reverse Leakage -200 V = -16V GS Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 17 SV = 10V, I = 14A fs DS D Q Total Gate Charge 6.5 9.7 I = 14A g D Q Gate-to-Source Charge 1.8 nC V = 10V gs DS Q Gate-to-Drain Mille) Charge 2.9 V = 4.5V gd GS Q Output Gate Charge 7.1 V = 0V, V = 10V oss GS DS t Turn-On Delay Time 8.7 V = 10V d(on) DD t Rise Time 78 I = 14A r D ns t Turn-Off Delay Time 10 R = 1.8 d(off) G t Fall Time 4.5 V = 4.5V f GS C Input Capacitance 670 V = 0V iss GS C Output Capacitance 470 V = 10V oss DS C Reverse Transfer Capacitance 68 pF = 1.0MHz rss Avalanche Characteristics Symbol Parameter Typ. Max. Units E Single Pulse Avalanche Energy 72 mJ AS I Avalanche Current 14 A AR Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 36 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 140 S (Body Diode) p-n junction diode. 1.3 V T = 25C, I = 18A, V = 0V J S GS V Diode Forward Voltage SD 0.88 T = 125C, I = 18A, V = 0V J S GS t Reverse Recovery Time 35 53 ns T = 25C, I = 18A, V =10V rr J F R Q Reverse Recovery Charge 34 51 nC di/dt = 100A/s rr t Reverse Recovery Time 35 53 ns T = 125C, I = 18A, V =10V rr J F R Q Reverse Recovery Charge 35 53 nC di/dt = 100A/s rr 2 www.irf.com