TM TM Polar3 HiperFET V = 500V IXFT60N50P3 DSS I = 60A Power MOSFET IXFQ60N50P3 D25 R 110m DS(on) IXFH60N50P3 N-Channel Enhancement Mode TO-268 (IXFT) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 500 V DSS J G V T = 25 C to 150 C, R = 1M 500 V DGR J GS D V Continuous 30 V S GSS D (Tab) V Transient 40 V GSM I T = 25 C 60 A D25 C TO-247 (IXFH) I T = 25 C, Pulse Width Limited by T 150 A DM C JM I T = 25 C30 A A C E T = 25 C1 J AS C G dv/dt I I , V V , T 150C 35 V/ns S DM DD DSS J D D (Tab) S P T = 25 C 1040 W D C T -55 ... +150 C J G = Gate D = Drain T 150 C S = Source Tab = Drain JM T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L Features T Plastic Body for 10s 260 C SOLD M Mounting Torque (TO-247 & TO-3P) 1.13 / 10 Nm/lb.in d Fast Intrinsic Rectifier Avalanche Rated Weight TO-268 4.0 g TO-3P 5.5 g Low R and Q DS(ON) G TO-247 6.0 g Low Package Inductance Advantages Symbol Test Conditions Characteristic Values High Power Density (T = 25 C Unless Otherwise Specified) Min. Typ. Max. Easy to Mount J Space Savings BV V = 0V, I = 1mA 500 V DSS GS D V V = V , I = 4mA 3.0 5.0 V Applications GS(th) DS GS D I V = 30V, V = 0V 100 nA GSS GS DS Switch-Mode and Resonant-Mode Power Supplies I V = V , V = 0V 25 A DSS DS DSS GS DC-DC Converters T = 125C 2 mA J Laser Drivers R V = 10V, I = 0.5 I , Note 1 110 m DS(on) GS D D25 AC and DC Motor Drives Robotics and Servo Controls 2015 IXYS CORPORATION, All Rights Reserved DS100311B(4/15)IXFT60N50P3 IXFQ60N50P3 IXFH60N50P3 Symbol Test Conditions Characteristic Values TO-3P Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J A 0P E E1 0P1 A2 g V = 20V, I = 0.5 I , Note 1 35 60 S fs DS D D25 S + + + C 6250 pF iss D1 D C V = 0V, V = 25V, f = 1MHz 680 pF 4 oss GS DS 1 2 3 C 5 pF L1 rss A1 R Gate Input Resistance 1.0 Gi t 18 ns d(on) Resistive Switching Times c b b2 t 16 ns r b4 V = 10V, V = 0.5 V , I = 0.5 I e GS DS DSS D D25 t 37 ns d(off) PINS: 1 - Gate R = 1 (External) t 8 ns 2, 4 - Drain G f 3 - Source Q 96 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 28 nC gs GS DS DSS D D25 Q 26 nC gd R 0.12 C/W thJC R (TO-247 & TO-3P) 0.25 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 60 A S GS TO-247 Outline I Repetitive, Pulse Width Limited by T 240 A D A SM JM A 0P + B O 0K M D B M E A2 A2 A2 A2 V I = I , V = 0V, Note 1 1.4 V Q SD F S GS S D2 R + + D1 t 250 ns D rr 0P1 I = 30A, -di/dt = 100A/ s F 4 I 11 A 1 2 3 RM ixys option V = 100V, V = 0V L1 R GS Q 1.0 C C RM E1 L A1 b Note 1. Pulse test, t 300 s, duty cycle, d 2%. c b2 b4 PINS: 1 - Gate e + O J M C A M 2, 4 - Drain 3 - Source TO-268 Outline Terminals: 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537