TM X2-Class HiPerFET V = 650V IXFK100N65X2 DSS Power MOSFET I = 100A IXFX100N65X2 D25 R 30m DS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C 650 V D DSS J Tab V T = 25 C to 150 C, R = 1M 650 V S DGR J GS V Continuous 30 V PLUS247 (IXFX) GSS V Transient 40 V GSM I T = 25 C 100 A D25 C I T = 25 C, Pulse Width Limited by T 200 A DM C JM I T = 25 C15A A C G D E T = 25 C 3.5 J AS C Tab S P T = 25 C 1040 W D C dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J G = Gate D = Drain T -55 ... +150 C S = Source Tab = Drain J T 150 C JM T -55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD International Standard Packages M Mounting Torque (TO-264) 1.13/10 Nm/lb.in Low Q d G Avalanche Rated F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb C Low Package Inductance Weight TO-264 10 g PLUS247 6 g Advantages High Power Density Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 1mA 650 V DSS GS D Applications V V = V , I = 4mA 3.5 5.0 V GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 30V, V = 0V 100 nA Power Supplies GSS GS DS DC-DC Converters I V = V , V = 0V 50 A DSS DS DSS GS PFC Circuits T = 125C 5 mA J AC and DC Motor Drives Robotics and Servo Controls R V = 10V, I = 0.5 I , Note 1 30 m DS(on) GS D D25 2016 IXYS CORPORATION, All Rights Reserved DS100684C(12/16)IXFK100N65X2 IXFX100N65X2 Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max A E J Q S g V = 10V, I = 0.5 I , Note 1 40 68 S fs DS D D25 R Q1 R Gate Input Resistance 0.7 D Gi R1 1 2 3 C 10.8 nF L1 iss C V = 0V, V = 25V, f = 1MHz 6000 pF oss GS DS L C 2.6 pF rss c b b1 A1 Effective Output Capacitance b2 x2 e C 365 pF o(er) Energy related V = 0V GS C 1500 pF V = 0.8 V 0P o(tr) 4 Time related DS DSS Terminals: 1 = Gate BACK SIDE 2,4 = Drain 3 = Source t 37 ns d(on) Resistive Switching Times t 26 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 90 ns d(off) R = 2 (External) G t 13 ns f Q 183 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 60 nC gs GS DS DSS D D25 Q 62 nC gd R 0.12C/W thJC R 0.15C/W thCS TM PLUS247 Outline A Source-Drain Diode E E1 A2 Q D2 R Symbol Test Conditions Characteristic Values D1 D (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J 4 1 2 3 I V = 0V 100 A S GS L1 I Repetitive, Pulse Width Limited by T 400 A SM JM L V I = I , V = 0V, Note 1 1.4 V SD F S GS t 200 ns b A1 e rr I = 50A, -di/dt = 100A/ s 3 PLCS F C 2 PLCS b2 2 PLCS b4 Q 1.7 C RM V = 100V, V = 0V Terminals: 1 - Gate R GS I 17.2 A 2,4 - Drain RM 3 - Source Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537