LBC846BPDW1T1G Leshan

Name: LBC846BPDW1T1G
Brand: Leshan
SKU: LBC846BPDW1T1G_Leshan
Availability: InStock
Rating: 5 (11 reviews)

LBC846BPDW1T1G electronic component of Leshan

LBC846BPDW1T1G Bipolar Transistors - BJT

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of LBC846BPDW1T1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. LBC846BPDW1T1G Bipolar Transistors - BJT are a product manufactured by Leshan. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No.	LBC846BPDW1T1G
Manufacturer:	Leshan
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) NPN,PNP 100mA 65V SC-70-6 (SOT-363) RoHS
Datasheet:	LBC846BPDW1T1G Datasheet (PDF)

Price (USD)

20: USD 0.0394 ea
Line Total: USD 0.79

Availability : 41923

Ship by Thu. 27 Nov to Wed. 03 Dec

Qty Unit Price
20 $ 0.0394
200 $ 0.0308
600 $ 0.0262
3000 $ 0.0158
9000 $ 0.0142
21000 $ 0.0132

LBC846BPDW1T1G More Buying Options & Price Grid(s)

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Availability

Price (USD)

Buy Price

Quantity

Availability 41923

Ship by Thu. 27 Nov to Wed. 03 Dec

MOQ : 20
Multiples : 20

Qty Unit Price
20 $ 0.0394
200 $ 0.0308
600 $ 0.0262
3000 $ 0.0158
9000 $ 0.0142
21000 $ 0.0132

Specifications

Manufacturer

Leshan Leshan

Product Category

Bipolar Transistors - BJT Bipolar Transistors - BJT

Category

Bipolar Transistors-BJT Bipolar Transistors-BJT

Rohs

y y

Package

SC - 70 - 6 (SOT - 363) SC - 70 - 6 (SOT - 363)

Brand Category

Leshan Leshan

Transistor Type

npn,pnp npn,pnp

Current - Collector Ic Max

100 mA 100 mA

Voltage - Collector Emitter Breakdown Max

65 V 65 V

Power - Max

380 mW 380 mW

Collector Cut-Off Current Icbo

15 nA 15 nA

Collector-Emitter Breakdown Voltage Vceo

65 V 65 V

Power Dissipation Pd

380 mW 380 mW

Collector Current Ic

100 mA 100 mA

Dc Current Gain Hfe@Ic Vce

290@2 mA , 5V 290@2 mA , 5V

Transition Frequency Ft

100MHz 100MHz

Collector-Emitter Saturation Voltage Vcesat@Ic Ib

600 mV @100 mA , 5 mA ;650 mV @100 mA , 5 mA 600 mV @100 mA , 5 mA ;650 mV @100 mA , 5 mA

Operating Temperature

- 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)

Notes:- Show Stocked Products With Similar Attributes.

LBC846BPDW1T1G Alternative Parts

We are delighted to provide the LBC846BPDW1T1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LBC846BPDW1T1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

Radio CompanyThe LBC846BPDW1T1G is an NPN/PNP bipolar transistor manufactured by Leshan Radio Company. It is housed in a SC-70-6 (SOT-363) RoHS-compliant package, and can handle up to 100mA of current at 65V. The NPN/PNP configuration makes it ideal for a variety of applications. It is also highly reliable and low-noise, making it suitable for use in critical systems.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Qty	Unit Price
20	$ 0.0394
200	$ 0.0308
600	$ 0.0262
3000	$ 0.0158
9000	$ 0.0142
21000	$ 0.0132

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