LBC857BDW1T1G Leshan

LBC857BDW1T1G electronic component of Leshan
LBC857BDW1T1G Leshan
LBC857BDW1T1G Bipolar Transistors - BJT
LBC857BDW1T1G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of LBC857BDW1T1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. LBC857BDW1T1G Bipolar Transistors - BJT are a product manufactured by Leshan. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. LBC857BDW1T1G
Manufacturer: Leshan
Category: Bipolar Transistors - BJT
Description: Transistors (NPN/PNP) SOT-363 RoHS
Datasheet: LBC857BDW1T1G Datasheet (PDF)
Price (USD)
20: USD 0.0444 ea
Line Total: USD 0.89 
Availability : 2172
  
Ship by Fri. 08 Aug to Wed. 13 Aug
QtyUnit Price
20$ 0.0444
200$ 0.0344
600$ 0.029
3000$ 0.0168
9000$ 0.0147
21000$ 0.0136

Availability 2172
Ship by Fri. 08 Aug to Wed. 13 Aug
MOQ : 20
Multiples : 20
QtyUnit Price
20$ 0.0444
200$ 0.0344
600$ 0.029
3000$ 0.0168
9000$ 0.0147
21000$ 0.0136

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Collector Cut-Off Current Icbo
Collector-Emitter Breakdown Voltage Vceo
Power Dissipation Pd
Collector Current Ic
Dc Current Gain Hfe@Ic Vce
Transition Frequency Ft
Collector-Emitter Saturation Voltage Vcesat@Ic Ib
Transistor Type
Operating Temperature
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the LBC857BDW1T1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LBC857BDW1T1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Radio CompanyThe LBC857BDW1T1G is a surface-mount Transistor manufactured by Leshan Radio Company. It is an NPN Transistor packaged in a SOT-363 RoHS compliant package. The LBC857BDW1T1G is designed for general purpose amplifying and switching applications, and is rated up to 500 mA with a 150 mW power dissipation. It features a Collector-Base voltage of 60 V, and a Collector-Emitter voltage of 40 V. It has a high current gain (Beta) of 250, making it an excellent choice for high gain, wide band amplifier applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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