LDTD113ZLT1G Leshan

LDTD113ZLT1G electronic component of Leshan
LDTD113ZLT1G Leshan
LDTD113ZLT1G Bipolar Transistors - BJT
LDTD113ZLT1G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of LDTD113ZLT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. LDTD113ZLT1G Bipolar Transistors - BJT are a product manufactured by Leshan. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. LDTD113ZLT1G
Manufacturer: Leshan
Category: Bipolar Transistors - BJT
Description: Transistors (NPN/PNP) SOT-23 RoHS
Datasheet: LDTD113ZLT1G Datasheet (PDF)
Price (USD)
20: USD 0.0658 ea
Line Total: USD 1.32 
Availability : 5917
  
Ship by Fri. 10 Oct to Thu. 16 Oct
QtyUnit Price
20$ 0.0658
200$ 0.0524
600$ 0.0338
3000$ 0.0274
9000$ 0.0247
21000$ 0.0234

Availability 5917
Ship by Fri. 10 Oct to Thu. 16 Oct
MOQ : 20
Multiples : 20
QtyUnit Price
20$ 0.0658
200$ 0.0524
600$ 0.0338
3000$ 0.0274
9000$ 0.0247
21000$ 0.0234

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the LDTD113ZLT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LDTD113ZLT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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RadianceThe LDTD113ZLT1G Transistor by Leshan Radiance is a SOT-23 RoHS-Compliant NPN Switching-Mode Transistor. It is designed for use in high-performance, low-power circuits, such as logic-level switching and/or circuit protection. It has a standard maximum collector-emitter voltage of 40V and a maximum collector current of 250mA, making it suitable for a wide range of applications. The transistor features a hFE of 100-300, making it capable of controlling large current loads. Its wide temperature range of -55°C to +150°C makes it suitable for use in applications that require long-term reliability. With its low-profile package and RoHS compliance, this transistor is ideal for use in applications that require a balance between performance, reliability, and cost.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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