MDS3604URH Magnachip

MDS3604 Single P-Channel Trench MOSFET, -30V, -11A, 12.1m MDS3604 Single P-Channel Trench MOSFET, -30V, -11A, 12.1m General Description Features The MDS3604 uses advanced MagnaChips MOSFET V = -30V DS Technology to provide low on-state resistance. I = -11A V = -10V D GS R DS(ON) < 10.0m V = -20V This device is suited for Power Management and load GS switching applications common in Notebook Computers < 12.1m V = -10V GS and Portable Battery Packs. < 18.3m V = -5V GS Applications Load Switch General purpose applications Smart Module for Note PC Battery D 5(D) 6(D) 7(D) 8(D) GG 4(G) 3(S) 2(S) 1(S) SS o Absolute Maximum Ratings (T =25 C unless otherwise noted) a Characteristics Symbol Rating Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 25 V GSS Continuous Drain Current (Note 1) I -11 A D Pulsed Drain Current IDM -44 A Power Dissipation P 2.5 W D Single Pulse Avalanche Energy (Note 2) E 84.5 mJ AS o Junction and Storage Temperature Range T , T -55~150 C J stg Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (Note 1) R 50 JA o C/W Thermal Resistance, Junction-to-Case RJC 25 May. 2011 Version 1.1 1 MagnaChip Semiconductor Ltd. MDS3604 Single P-Channel Trench MOSFET, -30V, -11A, 12.1m Ordering Information Part Number Temp. Range Package Packing Quantity RoHS Status o MDS3604URH -55~150 C SOIC-8 Tape & Reel 3000 units Halogen Free o Electrical Characteristics (T = 25 C unless otherwise noted) a Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV I = -250A, V = 0V -30 - - DSS D GS V Gate Threshold Voltage V V = V , I = -250A -1.0 -1.8 -3.0 GS(th) DS GS D Drain Cut-Off Current I V = -30V, V = 0V - -1 DSS DS GS A Gate Leakage Current I V = 25V, V = 0V - - 0.1 GSS GS DS V = -20V, I = -12A - 8.6 10 GS D m Drain-Source ON Resistance R V = -10V, I = -12A - 10 12.1 DS(ON) GS D V = -5V, I = -10A 14.6 18.3 GS D Forward Transconductance g V = -5V, I = -10A 25.5 - S FS DS D Dynamic Characteristics Total Gate Charge Q - 30.5 - g V = -15V, I = -12A DS D Gate-Source Charge Q - 5.2 - nC gs V = -10V GS Gate-Drain Charge Q - 7.0 - gd Input Capacitance C - 1433 - iss V = -15V, V = 0V, DS GS Reverse Transfer Capacitance C - 212 - pF rss f = 1.0MHz Output Capacitance C - 338 - oss Turn-On Delay Time t - 15.2 - d(on) Turn-On Rise Time t - 12.9 - r V = -10V ,V = -15V, GS DS ns R = 1.25, R = 3 L GEN Turn-Off Delay Time t - 50.6 - d(off) Turn-Off Fall Time t - 34.6 - f Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V I = -1A, V = 0V - -0.73 -1.0 V SD S GS Body Diode Reverse Recovery Time t - 38.5 ns rr I = -12A, di/dt = 100A/s F Body Diode Reverse Recovery Charge Q - 35.9 - nC rr Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7) 2. Starting T =25C, L=1mH, I = -13A V =-20V, V =-10V. J AS DD GS May. 2011 Version 1.1 2 MagnaChip Semiconductor Ltd.