JANTXV2N7225 Microchip

JANTXV2N7225 electronic component of Microchip
JANTXV2N7225 Microchip
JANTXV2N7225 MOSFETs
JANTXV2N7225  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of JANTXV2N7225 MOSFETs across the USA, India, Europe, Australia, and various other global locations. JANTXV2N7225 MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. JANTXV2N7225
Manufacturer: Microchip
Category: MOSFETs
Description: MOSFET
MOSFET Dual Single N Channel 25V 100A, 20W, 3-Pin TO-247
Datasheet:
Price (USD)
1: USD 55.1835 ea
Line Total: USD 55.18 
Availability : 0
  
QtyUnit Price
1$ 55.1835

Availability 0
Ship by Wed. 26 Nov to Tue. 02 Dec
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 55.1835

   
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We are delighted to provide the JANTXV2N7225 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JANTXV2N7225 and other electronic components in the MOSFETs category and beyond.

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The JANTXV2N7225 is an N-channel junction field-effect transistor (JFET) manufactured by Microchip. This device is designed for low frequency applications and offers low threshold voltage, low operating current, good linearity, and low capacitance. The JANTXV2N7225 features a maximum drain current of 30mA, a maximum drain-source voltage of 60V, and a maximum gate-source voltage of ±30V. This device also features low-bias insertion loss and low reverse current leakage. It is suitable for use in switching, amplifier, voltage regulator, and other applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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