X-On Electronics has gained recognition as a prominent supplier of ME15N10-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. ME15N10-G MOSFETs are a product manufactured by MQTSUKI. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

ME15N10-G MQTSUKI

Name: ME15N10-G
Brand: MQTSUKI
SKU: ME15N10G_MQTSUKI
Availability: InStock
Rating: 5 (11 reviews)

ME15N10-G electronic component of MQTSUKI

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See Product Specifications

Part No.	ME15N10-G
Manufacturer:	MQTSUKI
Category:	MOSFETs
Description:	MOSFET N Trench 100V 14.7A (Tc) 3V @ 250uA 100 mÎ© @ 8A,10V TO-252-2 (DPAK) RoHS
Datasheet:	ME15N10-G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.3206 ea
Line Total: USD 1.6

Availability - 1348
Ship by Fri. 20 Jun to Wed. 25 Jun

MOQ: 5 Multiples: 5
Pack Size: 5

ME15N10-G More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

1348

Ship by Fri. 20 Jun to Wed. 25 Jun

MOQ : 5
Multiples : 5

5 : USD 0.3206
50 : USD 0.25
150 : USD 0.1647
500 : USD 0.1227
2500 : USD 0.1113
5000 : USD 0.1045

Specifications

Manufacturer

MQTSUKI MQTSUKI

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

TO - 252 - 2 (DPAK) TO - 252 - 2 (DPAK)

Brand Category

MQTSUKI MQTSUKI

Fet Type

n trench n trench

Drain To Source Voltagevdss

100 V 100 V

Continuous Drain Current Id @ 25°C

14.7 A (t C) 14.7 A (t C)

Vgsth Max @ Id

3v @ 250ua 3v @ 250ua

Rds On Max @ Id Vgs

100 m @ 8a,10v 100 m @ 8a,10v

Power Dissipation-Max Ta

34.7 W 34.7 W

Drain Source Voltage Vdss

100 V 100 V

Continuous Drain Current Id

14.7 A 14.7 A

Power Dissipation Pd

34.7 W 34.7 W

Drain Source On Resistance Rdson@Vgs Id

100 mOhms @10V , 8A 100 mOhms @10V , 8A

Gate Threshold Voltage Vgsth@Id

3 V @250uA 3 V @250uA

Type

N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

ME15N10-G Alternative Parts

We are delighted to provide the ME15N10-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ME15N10-G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The ME15N10-G is a surface-mount MOSFET N-type transistor with a TO-252-2 DPAK package and a RoHS certification. It has a trench gate structure and is rated for 100V, 14.7A (Tc), 3V @ 250uA, 100 mO @ 8A, 10V. It is manufactured by Mitsubishi Electric.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
1348 Ship by Fri. 20 Jun to Wed. 25 Jun MOQ : 5 Multiples : 5	5 : USD 0.3206 50 : USD 0.25 150 : USD 0.1647 500 : USD 0.1227 2500 : USD 0.1113 5000 : USD 0.1045

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