Product Information

RFN5BGE3STL

RFN5BGE3STL electronic component of ROHM

Datasheet
Diodes - General Purpose, Power, Switching 350V Vrm; 5A Io TO-252 Rec Diode
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8061 ea
Line Total: USD 0.81

5981 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
5972 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 0.8061
10 : USD 0.7004
100 : USD 0.4968
500 : USD 0.4266
1000 : USD 0.3738
2500 : USD 0.322
5000 : USD 0.3174
25000 : USD 0.3163

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Packaging
Brand
Operating Temperature Range
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
LoadingGif

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Additional Infomation About Product

Super Fast Recovery Diode RFN5BGE3S Datasheet Series Dimensions (Unit : mm) Land size figure (Unit : mm) 6.0 Standard Fast Recovery Application 1.6 1.6 General rectification TO-252 2.3 2.3 Features Structure Cathode ROHM : TO-252GE 1) Low switching loss JEITA : - 2) High current overload capacity Open Anode Taping specifications (Unit : mm) Construction Silicon epitaxial planar type Absolute maximum ratings (at T = 25C unless otherwise specified) c Parameter Symbol Conditions Limits Unit V Duty0.5 350 Repetitive peak reverse voltage V RM V Reverse voltage Reverse direct voltage 350 V R 60Hz half sin waveform, I Average rectified foward current 5A o resistive load, T =95CMax c 60Hz half sin waveform, Peak forward surge current I 50 A FSM non-repetitive, T=25C j T Junction temperature - 150 C j Storage temperature T - 55 150 C stg Electrical characteristics (at T = 25C unless otherwise specified) j Parameter Symbol Conditions Min. Typ. Max. Unit V I =5A Forward voltage -1.1 1.5 V F F I V =350V Reverse current -- 10 R A R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr - 20 30 ns F R R (1) R Junction to case -- 6 C / W Thermal resistance th(j-c) (1) Value is guaranteed by design www.rohm.com 2020 ROHM Co., Ltd. All rights reserved. 2020/03/12 Rev.001 1/4 3.0 2.0 6.0Datasheet RFN5BGE3S Electrical characteristic curves 100 100000 T = 150C j T = 125C j 10000 10 1000 T = 75C j 1 T = 150C 100 j T = 25C j T = 125C 10 j 0.1 T = 75C j 1 T = 25C j 0.01 0.1 0 500 1000 1500 2000 0 50 100 150 200 250 300 350 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 f = 1MHz I FSM T = 25C a 8.3ms 8.3ms 1cyc. 100 100 10 10 T = 25C j 1 1 0 5 10 15 20 25 30 1 10 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2020 ROHM Co., Ltd. All rights reserved. 2020/03/12 Rev.001 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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