RFN5BGE3STL ROHM

RFN5BGE3STL electronic component of ROHM
RFN5BGE3STL ROHM
RFN5BGE3STL Diodes - General Purpose, Power, Switching
RFN5BGE3STL  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RFN5BGE3STL Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RFN5BGE3STL Diodes - General Purpose, Power, Switching are a product manufactured by ROHM. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

Part No. RFN5BGE3STL
Manufacturer: ROHM
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching 350V Vrm; 5A Io TO-252 Rec Diode
Datasheet: RFN5BGE3STL Datasheet (PDF)
Price (USD)
1: USD 1.05 ea
Line Total: USD 1.05 
Availability : 5858
  
Ship by Tue. 30 Sep to Thu. 02 Oct
QtyUnit Price
1$ 1.05
10$ 0.7908
100$ 0.5478
500$ 0.4268
1000$ 0.3894
2500$ 0.319
5000$ 0.3135
10000$ 0.3025

Availability 5858
Ship by Tue. 30 Sep to Thu. 02 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.05
10$ 0.7908
100$ 0.5478
500$ 0.4268
1000$ 0.3894
2500$ 0.319
5000$ 0.3135
10000$ 0.3025

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Packaging
Brand
Operating Temperature Range
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RFN5BGE3STL from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFN5BGE3STL and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Super Fast Recovery Diode RFN5BGE3S Datasheet Series Dimensions (Unit : mm) Land size figure (Unit : mm) 6.0 Standard Fast Recovery Application 1.6 1.6 General rectification TO-252 2.3 2.3 Features Structure Cathode ROHM : TO-252GE 1) Low switching loss JEITA : - 2) High current overload capacity Open Anode Taping specifications (Unit : mm) Construction Silicon epitaxial planar type Absolute maximum ratings (at T = 25C unless otherwise specified) c Parameter Symbol Conditions Limits Unit V Duty0.5 350 Repetitive peak reverse voltage V RM V Reverse voltage Reverse direct voltage 350 V R 60Hz half sin waveform, I Average rectified foward current 5A o resistive load, T =95CMax c 60Hz half sin waveform, Peak forward surge current I 50 A FSM non-repetitive, T=25C j T Junction temperature - 150 C j Storage temperature T - 55 150 C stg Electrical characteristics (at T = 25C unless otherwise specified) j Parameter Symbol Conditions Min. Typ. Max. Unit V I =5A Forward voltage -1.1 1.5 V F F I V =350V Reverse current -- 10 R A R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr - 20 30 ns F R R (1) R Junction to case -- 6 C / W Thermal resistance th(j-c) (1) Value is guaranteed by design www.rohm.com 2020 ROHM Co., Ltd. All rights reserved. 2020/03/12 Rev.001 1/4 3.0 2.0 6.0Datasheet RFN5BGE3S Electrical characteristic curves 100 100000 T = 150C j T = 125C j 10000 10 1000 T = 75C j 1 T = 150C 100 j T = 25C j T = 125C 10 j 0.1 T = 75C j 1 T = 25C j 0.01 0.1 0 500 1000 1500 2000 0 50 100 150 200 250 300 350 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 f = 1MHz I FSM T = 25C a 8.3ms 8.3ms 1cyc. 100 100 10 10 T = 25C j 1 1 0 5 10 15 20 25 30 1 10 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2020 ROHM Co., Ltd. All rights reserved. 2020/03/12 Rev.001 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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