PSMN3R0-60ES,127 Nexperia

PSMN3R0-60ES N-channel 60 V 3.0 m standard level MOSFET in I2PAK. 3 June 2014 Product data sheet 1. General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources 3. Applications DC-to-DC converters Load switching Motor control Server power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 60 V DS j j I drain current T = 25 C V = 10 V Fig. 2 1 - - 100 A D mb GS P total power dissipation T = 25 C Fig. 1 - - 306 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 2.4 3 m DSon GS D j resistance Fig. 11 Fig. 12 Dynamic characteristics Q gate-drain charge V = 10 V I = 80 A V = 12 V - 28 - nC GD GS D DS Fig. 13 Fig. 14 1 Continuous current is limited by package.Nexperia PSMN3R0-60ES N-channel 60 V 3.0 m standard level MOSFET in I2PAK. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S mb D mounting base connected to drain 1 2 3 I2PAK (SOT226) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN3R0-60ES I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 7. Marking Table 4. Marking codes Type number Marking code PSMN3R0-60ES PSMN3R0-60ES 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 60 V DS j j V drain-gate voltage T 25 C T 175 C R = 20 k - 60 V DGR j j GS V gate-source voltage -20 20 V GS P total power dissipation T = 25 C Fig. 1 - 306 W tot mb I drain current V = 10 V T = 100 C Fig. 2 - 83.4 A D GS mb V = 10 V T = 25 C Fig. 2 1 - 100 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 824 A DM p mb T storage temperature -55 175 C stg PSMN3R0-60ES All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 3 June 2014 2 / 13