PSMN3R4-30PL,127 Nexperia

PSMN3R4-30PL N-channel 30 V 3.4 m logic level MOSFET Rev. 01 2 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for logic level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --30 V DS j j 1 I drain current T =25C V =10V --100A D mb GS see Figure 1 total power T = 25 C see Figure 2 --114W P tot mb dissipation T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =4.5 V I =10A -3.5 4.1 m DSon GS D resistance T =25C see Figure 13 j 2 V =10V I =10A -2.8 3.4 m GS D T =25C see Figure 13 j Dynamic characteristics gate-drain charge V =4.5 V I =25A -8 -nC Q GD GS D V =15 V see Figure 14 DS total gate charge - 31 - nC Q G(tot) see Figure 15 Avalanche ruggedness E non-repetitive V =10V T =25C --200mJ DS(AL)S GS j(init) drain-source I =100 A V 30 V D sup avalanche energy R =50 unclamped GSPSMN3R4-30PL Nexperia N-channel 30 V 3.4 m logic level MOSFET 1 Continuous current is limited by package. 2 Measured 3 mm from package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D mb 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN3R4-30PL TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB PSMN3R4-30PL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 2 November 2010 2 of 15