Product Information

PSMN3R2-25YLC,115

PSMN3R2-25YLC,115 electronic component of NXP

Datasheet
MOSFET N-Ch 25V 3.4 mOhms
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5148 ea
Line Total: USD 0.51

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 0.5148
10 : USD 0.5089
125 : USD 0.4739
750 : USD 0.3861

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Brand
Factory Pack Quantity :
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Additional Infomation About Product

PSMN3R2-25YLC N-channel 25 V 3.4 m logic level MOSFET in LFPAK using NextPower technology Rev. 01 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, Optimised for 4.5V Gate drive utilising qualified to 175C NextPower Superjunction technology Low parasitic inductance and Ultra low QG, QGD and QOSS for high resistance system efficiencies at low and high loads 1.3 Applications DC-to-DC converters Server power supplies Load switching Sync rectifier Power OR-ing 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175C --25 V DS j 1 I drain current T =25C V =10 V see Figure 1 - - 100 A D mb GS P total power dissipation T =25C see Figure 2 --79 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 4.5 V I =25A T =25C - 3.7 4.45 m DSon GS D j resistance see Figure 12 V =10 V I =25A T =25C - 2.85 3.4 m GS D j see Figure 12 Dynamic characteristics gate-drain charge V = 4.5 V I =25A V =12V -4 -nC Q GD GS D DS see Figure 14 see Figure 15 Q total gate charge - 14 - nC G(tot) LFPAKPSMN3R2-25YLC NXP Semiconductors N-channel 25 V 3.4 m logic level MOSFET in LFPAK using NextPower 1 Continuous current is limited by package 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to drain 1234 SOT669 (LFPAK Power-SO8) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN3R2-25YLC LFPAK Power-SO8 plastic single-ended surface-mounted package 4 leads SOT669 4. Marking Table 4. Marking codes 1 Type number Marking code PSMN3R2-25YLC 3C225L 1 % = placeholder for manufacturing site code PSMN3R2-25YLC All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 01 2 May 2011 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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