Product Information

PSMN4R8-100BSE

PSMN4R8-100BSE electronic component of Nexperia

Datasheet
MOSFET, N-CH, 100V, 120A, D2PAK
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.1887 ea
Line Total: USD 6.19

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1

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PSMN4R8-100BSE
Nexperia

1 : USD 6.1887
10 : USD 4.9877
100 : USD 4.0934
500 : USD 3.1917

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
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Additional Infomation About Product

PSMN4R8-100BSE N-channel 100 V 4.8 m standard level MOSFET in D2PAK 12 April 2013 Product data sheet 1. General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 C. Part of NXP sNextPower Liv portfolio, the PSMN4R8-100BSE complements the latesthot- swa controllers - robust enough to withstand substantial inrush currents during turn on, whilst offering a low R characteristic to keep temperatures down and efficiency up in DS(on) continued use. Ideal for telecommunication systems based on a 48 V backplane / supply rail. 2. Features and benefits Enhanced forward biased safe operating area for superior linear mode operation Very low R for low conduction losses DS(on) 3. Applications Electronic fuse Hot swap Load switch Soft start 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I peak drain current pulsed T = 25 C t 10 s Fig. 4 - - 707 A DM mb p P total power dissipation T = 25 C Fig. 2 - - 405 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 4.1 4.8 m DSon GS D j resistance Fig. 12 Dynamic characteristics Q gate-drain charge V = 10 V I = 25 A V = 50 V - 59 83 nC GD GS D DS Fig. 14 Fig. 15 Q total gate charge - 196 278 nC G(tot) Scan or click this QR code to view the latest information for this product D2PAKNXP Semiconductors PSMN4R8-100BSE N-channel 100 V 4.8 m standard level MOSFET in D2PAK Symbol Parameter Conditions Min Typ Max Unit Avalanche Ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 120 A - - 542 mJ DS(AL)S GS j(init) D source avalanche V 100 V R = 50 unclamped sup GS energy Fig. 3 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 G gate D 2 D drain 1 G 3 S source mbb076 S mb D mounting base connected to 2 drain 1 3 D2PAK (SOT404) 1 It is not possible to make connection to pin 2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN4R8-100BSE D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 7. Marking Table 4. Marking codes Type number Marking code PSMN4R8-100BSE PSMN4R8-100BSE 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage T 25 C T 175 C R = 20 k - 100 V DGR j j GS V gate-source voltage -20 20 V GS PSMN4R8-100BSE All information provided in this document is subject to legal disclaimers. NXP B.V. 2013. All rights reserved Product data sheet 12 April 2013 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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