PSMN4R8-100BSE Nexperia

PSMN4R8-100BSE electronic component of Nexperia
PSMN4R8-100BSE Nexperia
PSMN4R8-100BSE MOSFETs
PSMN4R8-100BSE  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PSMN4R8-100BSE MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN4R8-100BSE MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PSMN4R8-100BSE
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET, N-CH, 100V, 120A, D2PAK
Datasheet: PSMN4R8-100BSE Datasheet (PDF)
Price (USD)
1: USD 5.8761 ea
Line Total: USD 5.88 
Availability : 0
  
QtyUnit Price
1$ 5.8761
10$ 4.0676
100$ 3.4742

Availability 0
Ship by Thu. 07 Aug to Wed. 13 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 5.8761
10$ 4.0676
100$ 3.4742

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
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We are delighted to provide the PSMN4R8-100BSE from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN4R8-100BSE and other electronic components in the MOSFETs category and beyond.

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PSMN4R8-100BSE N-channel 100 V 4.8 m standard level MOSFET in D2PAK 12 April 2013 Product data sheet 1. General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 C. Part of NXP sNextPower Liv portfolio, the PSMN4R8-100BSE complements the latesthot- swa controllers - robust enough to withstand substantial inrush currents during turn on, whilst offering a low R characteristic to keep temperatures down and efficiency up in DS(on) continued use. Ideal for telecommunication systems based on a 48 V backplane / supply rail. 2. Features and benefits Enhanced forward biased safe operating area for superior linear mode operation Very low R for low conduction losses DS(on) 3. Applications Electronic fuse Hot swap Load switch Soft start 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I peak drain current pulsed T = 25 C t 10 s Fig. 4 - - 707 A DM mb p P total power dissipation T = 25 C Fig. 2 - - 405 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 4.1 4.8 m DSon GS D j resistance Fig. 12 Dynamic characteristics Q gate-drain charge V = 10 V I = 25 A V = 50 V - 59 83 nC GD GS D DS Fig. 14 Fig. 15 Q total gate charge - 196 278 nC G(tot) Scan or click this QR code to view the latest information for this product D2PAKNXP Semiconductors PSMN4R8-100BSE N-channel 100 V 4.8 m standard level MOSFET in D2PAK Symbol Parameter Conditions Min Typ Max Unit Avalanche Ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 120 A - - 542 mJ DS(AL)S GS j(init) D source avalanche V 100 V R = 50 unclamped sup GS energy Fig. 3 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 G gate D 2 D drain 1 G 3 S source mbb076 S mb D mounting base connected to 2 drain 1 3 D2PAK (SOT404) 1 It is not possible to make connection to pin 2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN4R8-100BSE D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 7. Marking Table 4. Marking codes Type number Marking code PSMN4R8-100BSE PSMN4R8-100BSE 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage T 25 C T 175 C R = 20 k - 100 V DGR j j GS V gate-source voltage -20 20 V GS PSMN4R8-100BSE All information provided in this document is subject to legal disclaimers. NXP B.V. 2013. All rights reserved Product data sheet 12 April 2013 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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