Product Information

PSMN4R8-100BSEJ

PSMN4R8-100BSEJ electronic component of Nexperia

Datasheet
MOSFET N-channel 100 V 4.8 mo FET
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.6915 ea
Line Total: USD 3.69

11943 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1497 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 3.3657
10 : USD 3.3137
25 : USD 3.0355
100 : USD 2.756
250 : USD 2.7009
500 : USD 2.7009
1000 : USD 2.7009

6208 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 800
Multiples : 800
800 : USD 2.5302
2400 : USD 2.5302

2328 - WHS 3


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 800
Multiples : 800
800 : USD 2.444
1600 : USD 2.444
2400 : USD 2.444

26384 - WHS 4


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 800
Multiples : 800
800 : USD 2.4672

11943 - WHS 5


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 3.6915
10 : USD 3.2775
25 : USD 3.174
100 : USD 2.806
250 : USD 2.7025
500 : USD 2.5875
800 : USD 2.1965
2400 : USD 2.1275

1552 - WHS 6


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 800
Multiples : 800
800 : USD 3.7718

6208 - WHS 7


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 800
Multiples : 800
800 : USD 2.4511

1497 - WHS 8


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 3
Multiples : 1
3 : USD 3.3657
10 : USD 3.3137
25 : USD 3.0355
100 : USD 2.756
250 : USD 2.7009

2328 - WHS 9


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 800
Multiples : 800
800 : USD 2.4033

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

PSMN4R8-100BSEJ is an N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by Nexperia. It is rated for a drain-source voltage (VDS) of 100 volts (V) and a maximum continuous drain current (ID) of 4.8 milli-Amperes (mA). It is a General-Purpose MOSFET with “Fast Switching” features, allowing it to have higher switching speeds over standard MOSFETs. It is offered in a surface-mount (SMT) PowerPAK SO-8L package.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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