Product Information

NTE2906

NTE2906 electronic component of NTE

Datasheet
Transistor: N-MOSFET; 200V; 8A; TO3

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2: USD 55.4357 ea
Line Total: USD 110.87

0 - Global Stock
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 2
Multiples : 1
2 : USD 55.4357
10 : USD 28.6371
25 : USD 26.7317
50 : USD 26.0297
100 : USD 25.0603

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 39.256
2 : USD 37.114

     
Manufacturer
Product Category
Mounting
Case
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
Drain Current
LoadingGif

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NTE2906 MOSFET NChannel, Enhancement Mode High Speed Switch (Compl to NTE2998) TO3 Type Package D Features: High Speed Switching High Voltage High Energy Rating G Enhancement Mode Integral Protection Diode S Absolute Maximum Ratings: (T = +25 C unless otherwise specified) C DrainSource Voltage, V ........................................................ 200V DSX GateSource Voltage, V ........................................................ 14V GSS Continuous Drain Current, I ......................................................... 8A D Body Drain Diode, I ............................................................. 8A D(PK) Total Power Dissipation (T = +25 C), P ........................................... 125W C D Maximum Operating Junction Temperature, T ...................................... +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Thermal Resistance, Junction toCase, R ..................................... 1.0 C/W thJC Electrical Characteristics: (T = +25 C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics DrainSource Breakdown Voltage BV V = 10V, I = 10mA 200 V DSX GS D GateSource Breakdown Voltage BV V = 0, I = 100 A 14 V GSS DS G GateSource CutOff Voltage V V = 10V, I = 100mA 0.15 1.5 V GS(OFF) DS D DrainSource Saturation Voltage V V = 0, I = 8A, Note 1 12 V DS(SAT) GD D DrainSource CutOff Current I V = 10V, V = 200V 10 mA DSX GS DS Forward Transfer Admittance y V = 10V, I = 3A, Note 1 0.7 2.0 S fs DS D Note 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. Rev. 1013Electrical Characteristics (Contd): (T = +25 C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Characteristics Input Capacitance C V = 10V, f = 1MHz 500 pF iss DS Output Capacitance C 300 pF oss Reverse Transfer Capacitance C 10 pF rss TurnOn Time t V = 20V, I = 5A 100 ns on DS D TurnOff Time t 50 ns off .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) Drain 1.187 (30.16) .215 (5.45) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Gate Source/Case

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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