NTE2950 MOSFET NChannel, Enhancement Mode High Speed Switch TO262 Type Package Features: Low R Reduces Losses DSON Low Gate Charge Improves the Switching Performance D Improved Diode Recovery Improves Switching & EMI Performance 30V Gate Voltage Rating Improves Robustness Fully Characterized Avalanche SOA Applications G Motion Control Applications High Efficiency Synchronous Rectification in SMPS S Uninterruptible Power Supply Hard Switched and High Frequency Circuits Absolute Maximum Ratings: Continuous Drain Current (V = 10V), I GS D T = +25C (Note 1) .......................................................... 85A C T = +100C ................................................................. 60A C Pulsed Drain Current (Note 2), I .................................................. 330A DM Maximum Power Dissipation (T = +25C), P ....................................... 350W C D Linear Derating Factor .................................................... 2.3W/ C GatetoSource Voltage, V ...................................................... 30V GS Single Pulse Avalanche Energy (Thermally Limited, Note 3), E ...................... 120mJ AS Operating Junction Temperature Range, T ................................. 55 to +175C opr Storage Temperature Range, T ......................................... 55 to +175C STG Lead Temperature (During soldering, 10 sec. max, 1.6mm from case), T ............... +300 C L Thermal Resistance, Junction toCase (Note 4, Note 5), R ..................... 0.43 C/W thJC Thermal Resistance, Junction toAmbient (Note 4), R ........................... 40 C/W thJA Note 1. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A Note 2. Repetitive rating: pulse width limited by max. junction temperature. Note 3. Limited by T , starting T = +25C, L = 0.096mH, R = 25 , I = 50A, V = 10V. Device Jmax J G AS GS not recommended for use above this value. Note 4. Thermal resistance is measured at T approximately +90 C. J Note 5. R (end of life) = 0.65C/W. This is the maximum measured value after 1000 temperature thJC cycles from 55 to +15C and is accounted for by the physical wearout of the die attach medium.Electrical Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Static (T = +25 C unless otherwise specified) J DraintoSource Breakdown Voltage V V = 0V,I = 250 A 150 V (BR)DSS GS D V / Reference to +25 C, I = 1mA, 150 mV/ C Breakdown Voltage Temp. Coefficient (BR)DSS D Note 2 T J Static DraintoSource OnResistance R V = 10V, I = 33A, Note 6 12 15 m DS(on) GS D Gate Threshold Voltage V V = V , I = 250 A 3.0 5.0 V GS(th) DS GS D DraintoSource Leakage Current I 20 A V = 150V, DSS DS V = 0V GS T = +125 C 1.0 mA J GatetoSource Leakage Current I V = 20V 100 nA GSS GS Internal Gate Resistance R 0.8 G(int) Dynamic (T = +25 C unless otherwise specified) J Forward Transconductance gfs V = 25V, I = 50A 130 S DS D Total Gate Charge Q I = 50A, V = 75V, 71 110 nC g D DS V = 10V, Note 6 GS GatetoSource Charge Q 24 nC gs GatetoDrain (Miller) Charge Q 21 nC gd TurnOn Delay Time t V = 98V, I = 50A, R = 2.5 , 18 ns d(on) DD D G V = 10V, Note 6 GS Rise Time t 60 ns r TurnOff Delay Time t 25 ns d(off) Fall Time t 35 ns f Input Capacitance C V = 0V, V = 50V, f = 1MHz 4460 pF iss GS DS Output Capacitance C 390 pF oss Reverse Transfer Capacitance C 82 pF rss Diode Characteristics Continuous Source Current (Body Diode) I Note 1 85 A S Pulsed Source Current (Body Diode) I Note 2 330 A SM Diode Forward Voltage V I = 50A, V = 0V, T = +25 C, 1.3 V SD S GS J Note 6 Reverse Recovery Time t 89 130 ns I = 50A, V = 128V, rr D R di/dt = 100A/ s, Note 6 Reverse Recovery Charge Q 300 450 nC rr Reverse Recovery Current I 6.5 A RRM Forward TurnOn Time ton Intrinsic turnon time is negligible (turnon is dominated by LS+LD) Note 1. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A Note 2. Repetitive rating: pulse width limited by max. junction temperature. Note 6. Pulse width 400 s duty cycle 2%.