DocumentNumber:AFSC5G35D37 NXPSemiconductors Rev. 3, 05/2019 TechnicalData PowerAmplifierModuleforLTEand AFSC5G35D37 5G TheAFSC5G35D37isafullyintegratedDohertypoweramplifiermodule designedforwirelessinfrastructureapplicationsthatdemandhigh 34003600MHz,29dB,5WAvg. performance in the smallest footprint. Ideal for applications in massive MIMO AIRFASTPOWERAMPLIFIER systems,outdoorsmallcells,andlowpowerremoteradioheads.The MODULE field--provenLDMOSpoweramplifiersaredesignedforTDDandFDDLTE systems. Typical LTE Performance: P =5WAvg.,V =30Vdc,1 20MHz LTE, out DD (1) Input SignalPAR = 8dB 0.01%Probability onCCDF. CarrierCenter Gain ACPR PAE Frequency (dB) (dBc) (%) 3400MHz 29.2 31.4 38.8 3500MHz 29.3 32.8 39.2 3600MHz 29.4 31.0 38.6 1. AlldatameasuredwithdevicesolderedinNXP referencecircuit. 10mm 6mmModule Features Frequency: 34003600MHz Advancedhighperformancein--packageDoherty Fully matched(50ohm input/output, DC blocked) Designedfor low complexity analogor digitallinearizationsystems 20182019NXPB.V. AFSC5G35D37 RF DeviceData NXP Semiconductors 1Pin 1 index area GND 1 18 GND N.C. 2 17 RF out (1) V 3 16 GND DP2 V 4 15 GND DP1 RF 5 14 GND in (Top View) Pin 1 index area 18 1 17 2 16 27 3 15 4 14 5 (Bottom View) Note: Exposed backside of the package is DC and RF ground. Figure1.PinConnections 1. V andV areDCcoupledinternaltothepackageandmustbepoweredby asingleDCpowersupply. DP2 DC2 AFSC5G35D37 RF DeviceData NXP Semiconductors 2 V 13 19 6 26 GND GP2 12 20 V 7 25 GND GP1 11 21 V 8 24 GND GC 1 V 10 22 9 23 GND GC 2 9 23 V 10 22 GND DC1 (1) V 8 24 11 21 GND DC2 7 25 N.C. 12 20 GND 19 6 26 GND 13 GND