Product Information

AFSC5G35D37T2

AFSC5G35D37T2 electronic component of NXP

Datasheet
RF Amplifier Airfast Power Amplifier Module 3400-3600 MHz 29 dB 5 W Avg.

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2000: USD 20.7509 ea
Line Total: USD 41501.8

0 - Global Stock
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
0 - Global Stock


Ships to you between Tue. 17 Oct to Thu. 19 Oct

MOQ : 2000
Multiples : 2000
2000 : USD 25.0344

     
Manufacturer
NXP
Product Category
RF Amplifier
RoHS - XON
Y Icon ROHS
Operating Supply Voltage
30 V
Maximum Operating Temperature
+ 125 C
Packaging
Cut Tape
Series
Afsc5g35d37
Product
Power Amplifier Modules
Brand
Nxp Semiconductors
Moisture Sensitive
Yes
Product Type
Rf Amplifier
Factory Pack Quantity :
2000
Subcategory
Wireless & Rf Integrated Circuits
Show Stocked Products With Similar Attributes. LoadingGif
Image Description
AFT05MP075NR1 electronic component of NXP AFT05MP075NR1
NXP Freescale RF MOSFET Transistors MV9 75W 12.5V TO270WB4
Stock : 0
AFT05MS003NT1 electronic component of NXP AFT05MS003NT1
RF MOSFET Transistors Airfast Wideband RF Power LDMOS Transistor 1.8-941 MHz, 3 W, 7.5V
Stock : 0
AFT05MS006NT1 electronic component of NXP AFT05MS006NT1
NXP Freescale RF MOSFET Transistors 136-941 MHz 6 W 7.5V
Stock : 1171
AFT05MS031GNR1 electronic component of NXP AFT05MS031GNR1
NXP Freescale RF MOSFET Transistors MV9 UHF 13.6V
Stock : 296
AFT05MS004NT1 electronic component of NXP AFT05MS004NT1
RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 136-941 MHz, 4 W, 7.5 V
Stock : 106
AFT05MS031NR1 electronic component of NXP AFT05MS031NR1
RF MOSFET Transistors MV9 UHF 13.6V
Stock : 957
AFSC5G37D37-EVB electronic component of NXP AFSC5G37D37-EVB
RF Development Tools AFSC5G37D37 3600-3800 MHz Reference Circuit
Stock : 2
AFSC5G37D37T2 electronic component of NXP AFSC5G37D37T2
RF Amplifier Airfast Power Amplifier Module 3600-3800 MHz 29 dB 5.7 W Avg.
Stock : 0
AFT09MP055NR1 electronic component of NXP AFT09MP055NR1
RF MOSFET Transistors MV9 55W 12.5V TO270WB4
Stock : 0
AFT05MP075GNR1 electronic component of NXP AFT05MP075GNR1
RF MOSFET Transistors MV9 75W 12.5V TO270WB4G
Stock : 500
Image Description
AFSC5G37D37T2 electronic component of NXP AFSC5G37D37T2

RF Amplifier Airfast Power Amplifier Module 3600-3800 MHz 29 dB 5.7 W Avg.
Stock : 0

LTE3401HX electronic component of NXP LTE3401HX

RF Amplifier MMIC
Stock : 0

LTE3401LX electronic component of NXP LTE3401LX

RF Amplifier MMIC
Stock : 0

SKY66289-11 electronic component of Skyworks SKY66289-11

RF Amplifier 791-821MHz High Efficiency Small CellPA
Stock : 2470

SKY66298-11 electronic component of Skyworks SKY66298-11

RF Amplifier 925-960MHz High Effi SmallCellPA
Stock : 2287

MAAL-011151-TR0100 electronic component of MACOM MAAL-011151-TR0100

RF Amplifier 2-18GHz LNA
Stock : 86

MAAM-011238-TR0100 electronic component of MACOM MAAM-011238-TR0100

RF Amplifier Amplifier,5x5mm,DC-50GHz,100 part Reel
Stock : 84

MAAM-011275-DIE electronic component of MACOM MAAM-011275-DIE

RF Amplifier Amplifier, DC to 40 GHz DA,Bare Die
Stock : 100

MAAM-011286-DIE electronic component of MACOM MAAM-011286-DIE

RF Amplifier Amplifier,High Gain, DC-44 GHz, Bare Die
Stock : 280

MAAP-011289-TR0500 electronic component of MACOM MAAP-011289-TR0500

RF Amplifier Ka-Band 3W Power Amp
Stock : 0

DocumentNumber:AFSC5G35D37 NXPSemiconductors Rev. 3, 05/2019 TechnicalData PowerAmplifierModuleforLTEand AFSC5G35D37 5G TheAFSC5G35D37isafullyintegratedDohertypoweramplifiermodule designedforwirelessinfrastructureapplicationsthatdemandhigh 34003600MHz,29dB,5WAvg. performance in the smallest footprint. Ideal for applications in massive MIMO AIRFASTPOWERAMPLIFIER systems,outdoorsmallcells,andlowpowerremoteradioheads.The MODULE field--provenLDMOSpoweramplifiersaredesignedforTDDandFDDLTE systems. Typical LTE Performance: P =5WAvg.,V =30Vdc,1 20MHz LTE, out DD (1) Input SignalPAR = 8dB 0.01%Probability onCCDF. CarrierCenter Gain ACPR PAE Frequency (dB) (dBc) (%) 3400MHz 29.2 31.4 38.8 3500MHz 29.3 32.8 39.2 3600MHz 29.4 31.0 38.6 1. AlldatameasuredwithdevicesolderedinNXP referencecircuit. 10mm 6mmModule Features Frequency: 34003600MHz Advancedhighperformancein--packageDoherty Fully matched(50ohm input/output, DC blocked) Designedfor low complexity analogor digitallinearizationsystems 20182019NXPB.V. AFSC5G35D37 RF DeviceData NXP Semiconductors 1Pin 1 index area GND 1 18 GND N.C. 2 17 RF out (1) V 3 16 GND DP2 V 4 15 GND DP1 RF 5 14 GND in (Top View) Pin 1 index area 18 1 17 2 16 27 3 15 4 14 5 (Bottom View) Note: Exposed backside of the package is DC and RF ground. Figure1.PinConnections 1. V andV areDCcoupledinternaltothepackageandmustbepoweredby asingleDCpowersupply. DP2 DC2 AFSC5G35D37 RF DeviceData NXP Semiconductors 2 V 13 19 6 26 GND GP2 12 20 V 7 25 GND GP1 11 21 V 8 24 GND GC 1 V 10 22 9 23 GND GC 2 9 23 V 10 22 GND DC1 (1) V 8 24 11 21 GND DC2 7 25 N.C. 12 20 GND 19 6 26 GND 13 GND

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI