BFG198,115

DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification 1995 Sep 12NXP Semiconductors Product specification NPN 8 GHz wideband transistor BFG198 DESCRIPTION PINNING NPN planar epitaxial transistor in a PIN DESCRIPTION plastic SOT223 envelope, intended fpage 4 1emitter for wideband amplifier applications. 2base The device features a high gain and excellent output voltage capabilities. 3emitter 4 collector 123 MSB002 - 1 Top view Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage open base 10 V CEO I DC collector current 100 mA C P total power dissipation up to T =135 C (note 1) 1W tot s h DC current gain I =50mA V =5V T =25 C40 90 FE C CE j f transition frequency I =50mA V =8V f= 1GHz 8 GHz T C CE T =25 C amb G maximum unilateral power I =50mA V = 8 V f = 500 MHz 18 dB UM C CE gain T =25 C amb I =50mA V = 8 V f = 800 MHz 15 dB C CE T =25 C amb V output voltage d = 60 dB I =70mA V =8V 700 mV o im C CE R =75 T =25 C L amb f =793.25MHz (p+qr) LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage open base 10 V CEO V emitter-base voltage open collector 2.5 V EBO I DC collector current 100 mA C P total power dissipation up to T =135 C (note 1) 1W tot s T storage temperature 65 +150 C stg T junction temperature 175 C j Note 1. T is the temperature at the soldering point of the collector tab. s 1995 Sep 12 2