Product Information

1SMA14AT3G

1SMA14AT3G electronic component of ON Semiconductor

Datasheet
ESD Suppressors / TVS Diodes ZEN SMA TVS 400W 5.0V TR

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

1SMA14AT3G
ON Semiconductor

1 : USD 1.0014
10 : USD 0.8265
100 : USD 0.2245
500 : USD 0.1704
1000 : USD 0.1331
2500 : USD 0.123
5000 : USD 0.1162
10000 : USD 0.1106
25000 : USD 0.1061
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Cd - Diode Capacitance
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Channels
Mounting Style
Factory Pack Quantity :
Current Rating
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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TVS Diodes Surface Mount > 400W > 1SMA5.0AT3G Series Pb 1SMA5.0AT3G Series Description The 1SMA5.0AT3G series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The 1SMA5.0AT3G series is supplied in the Littelfuse exclusive, cost-effective, highly reliable package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. Features Working Peak Reverse Voltage Range 5.0 V to 78 V Maximum Ratings and Thermal Characteristics Standard Zener Breakdown Voltage Range 6.7 V to 91.25 V Parameter Symbol Value Unit Peak Power 400 W 1 ms Peak Power Dissipation (Note 1) T = L P 400 W ESD Rating of Class 3 (> 16 kV) per Human Body Model PK 25C, Pulse Width = 1 ms Response Time is Typically < 1 ns Flat Handling Surface for Accurate Placement DC Power Dissipation T = 75C L W 1.0 Measured Zero Lead Length (Note 2) PD Package Design for Top Slide or Bottom Circuit Derate Above 75C 20 mW/C Board Mounting Thermal Resistance from Junction R JL 50 C/W toLead Low Profile Package Bi-directional These are PbFree Device DC Power Dissipation (Note 3) P 0.5 W D TA = 25C 4.0 mW/C Derate Above 25C Functional Diagram R Thermal Resistance from Junctionto C/W 250 0JA Ambient Cathode Anode Forward Surge Current (Note 4) TA I 40 A = 25C FSM Additional Information Operating and Storage Temperature -65 to T T C J, stg Range +150 Uni-directional Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may Samples Datasheet Resources occur and reliability may be affected. 1. 10 X 1000 s, nonrepetitive. 2. 1 square copper pad, FR4 board. 3. FR4 board, using Littelfuse minimum recommended footprint, as shown in 403D-02 case outline dimensions spec. 4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/14/17TVS Diodes Surface Mount > 400W > 1SMA5.0AT3G Series I-V Curve Characteristics (T = 25C unless otherwise noted, V = 3.5 V Max. I = 30 A for all types) (Note 5) A F F Symbol Parameter I I Maximum Reverse Peak Pulse Current I PP F V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM V V V C BR RWM I Maximum Reverse Leakage Current V R RWM V I V R F I T V Breakdown Voltage I BR T I Test Current T I Maximum Temperature Coefficient of V F BR I PP V Forward Voltage I F F 5. 1/2 sine wave or equivalent, PW = 8.3 ms, nonrepetitive duty cycle. 5. 1/2 sine wave or equivalent, PW = 8.3 ms nonrepetitive duty cycle 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/14/17

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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