Product Information

NUP4000DR2G

NUP4000DR2G electronic component of ON Semiconductor

Datasheet
ESD Suppressors / TVS Diodes 4 CHAN BIDIRECTIONAL TVS

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

NUP4000DR2G
ON Semiconductor

1 : USD 4.9161
10 : USD 1.7381
100 : USD 1.5097
500 : USD 1.4209
1000 : USD 1.2586
2500 : USD 1.2369
5000 : USD 1.2369
10000 : USD 1.19
25000 : USD 1.1431
N/A

Obsolete
0 - WHS 2

MOQ : 2500
Multiples : 2500

Stock Image

NUP4000DR2G
ON Semiconductor

2500 : USD 1.3365
N/A

Obsolete
     
Manufacturer
Product Category
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Cnhts
Hts Code
Mxhts
Factory Pack Quantity :
Subcategory
Taric
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NUP4000 ESD Protection Diode Array Bidirectional ESD Protection for HighSpeed Data Line The NUP4000 surge protection is designed to protect equipment attached to up to four high speed communication lines from ESD, www.onsemi.com EFT, and lightning. Features: SO8 SO8 Package VOLTAGE SUPPRESSOR Peak Power 400 W 8 x 20 S 400 WATTS PEAK POWER ESD Rating: 15 VOLTS IEC 6100042 (ESD) 15 kV (air) 8 kV (contact) IEC 6100044 (EFT) 40 A (5/50 ns) IEC 6100045 (lightning) 12 A (8/20 s) PIN CONFIGURATION UL Flammability Rating of 94 V0 AND SCHEMATIC These Devices are PbFree, Halogen Free/BFR Free and are RoHS 1 8 Compliant 2 7 Typical Applications: 3 6 High Speed Communication Line Protection 4 5 15 V Data and I/O Lines Microprocessor Based Equipment LAN/WAN Equipment 8 Servers 1 Notebook and Desktop PC Serial and Parallel Ports SO8 Peripherals CASE 751 MAXIMUM RATINGS MARKING DIAGRAM Rating Symbol Value Unit 8 Peak Power Dissipation P 400 W NUP40 pk 8 x 20 s T = 25C (Note 1) AYWW A Peak Pulse Current I 10 A PP 1 8 x 20 s T = 25C (Note 1) A A = Assembly Location Junction and Storage T , T 55 to C J stg Temperature Range +150 Y = Year WW = Work Week Lead Solder Temperature T 260 C L = PbFree Package Maximum 10 Seconds Duration (Note: Microdot may be in either location) 1. Nonrepetitive current pulse 8 x 20 S exponential decay waveform ORDERING INFORMATION Device Package Shipping NUP4000DR2G SO8 2500 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: October, 2017 Rev. 1 NUP4000/DNUP4000 ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Reverse Working Voltage V 15 V RWM Reverse Breakdown Voltage I = 1.0 mA V 16.7 V t BR Reverse Leakage Current V = 15 Volts I N/A 1.0 A RWM R Maximum Clamping Voltage I = 1.0 A, 8 x 20 S V N/A 24 V PP C Maximum Clamping Voltage I = 5.0 A, 8 x 20 S V N/A 30 V PP C Maximum Peak Pulse Current I 10 A PP Junction Capacitance V = 0 V, f = 1 MHz C 75 pF R J 1000 100 t PEAK VALUE I 8 s r RSM 90 PULSE WIDTH (t ) IS DEFINED P 80 AS THAT POINT WHERE THE 70 PEAK CURRENT DECAY = 8 s 100 60 HALF VALUE I /2 20 s RSM 50 40 10 30 t P 20 NOTE: NonRepetitive Surge. 10 1 0 1 10 100 1000 020 40 60 80 t, TIME ( s) t, TIME ( s) Figure 1. Pulse Width Figure 2. 8 20 s Pulse Waveform www.onsemi.com 2 P , PEAK SURGE POWER (WATTS) pk % OF PEAK PULSE CURRENT

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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