Product Information

MJE170G

MJE170G electronic component of ON Semiconductor

Datasheet
Bipolar (BJT) Transistor PNP 40 V 3 A 50MHz 1.5 W Through Hole TO-126

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4991 ea
Line Total: USD 0.4991

258 - Global Stock
Ships to you between
Fri. 05 Apr to Thu. 11 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
258 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 1
Multiples : 1

Stock Image

MJE170G
ON Semiconductor

1 : USD 0.4991
10 : USD 0.3969
100 : USD 0.3655
500 : USD 0.3504
1000 : USD 0.3434
2500 : USD 0.3434
10000 : USD 0.3434

10 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 1
Multiples : 1

Stock Image

MJE170G
ON Semiconductor

1 : USD 0.4901
2500 : USD 0.3965
10000 : USD 0.3848

24 - Global Stock


Ships to you between
Fri. 12 Apr to Wed. 17 Apr

MOQ : 1
Multiples : 1

Stock Image

MJE170G
ON Semiconductor

1 : USD 1.2049
10 : USD 0.9987
30 : USD 0.8979
100 : USD 0.7947
500 : USD 0.7345
1000 : USD 0.7024

258 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 23
Multiples : 1

Stock Image

MJE170G
ON Semiconductor

23 : USD 0.3969
100 : USD 0.3655
500 : USD 0.3504
1000 : USD 0.3434

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN) Complementary Plastic Silicon Power Transistors MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R 10 C/W JC Thermal Resistance, JunctiontoAmbient R 83.4 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V Vdc CEO(sus) (I = 10 mAdc, I = 0) C B MJE170G, MJE180G 40 MJE171G, MJE181G 60 MJE172G, MJE182G 80 Collector Cutoff Current I CBO (V = 60 Vdc, I = 0) CB E MJE170G, MJE180G 0.1 Adc (V = 80 Vdc, I = 0) CB E MJE171G, MJE181G 0.1 (V = 100 Vdc, I = 0) CB E MJE172G, MJE182G 0.1 mAdc (V = 60 Vdc, I = 0, T = 150C) CB E C MJE170G, MJE180G (V = 80 Vdc, I = 0, T = 150C) CB E C MJE171G, MJE181G 0.1 (V = 100 Vdc, I = 0, T = 150C) CB E C MJE172G, MJE182G 0.1 Emitter Cutoff Current I Adc EBO (V = 7.0 Vdc, I = 0) 0.1 BE C ON CHARACTERISTICS DC Current Gain h FE (I = 100 mAdc, V = 1.0 Vdc) 50 250 C CE (I = 500 mAdc, V = 1.0 Vdc) 30 C CE (I = 1.5 Adc, V = 1.0 Vdc) 12 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 500 mAdc, I = 50 mAdc) 0.3 C B (I = 1.5 Adc, I = 150 mAdc) 0.9 C B (I = 3.0 Adc, I = 600 mAdc) 1.7 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 1.5 Adc, I = 150 mAdc) 1.5 C B (I = 3.0 Adc, I = 600 mAdc) 2.0 C B BaseEmitter On Voltage V Vdc BE(on) (I = 500 mAdc, V = 1.0 Vdc) 1.2 C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product (Note 1) f 50 MHz T (I = 100 mAdc, V = 10 Vdc, f = 10 MHz) C CE test Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 0.1 MHz) CB E MJE171G/MJE172G 60 MJE181G/MJE182G 40 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. f = h f . T fe test

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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