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FDMS86320 N-Channel PowerTrench MOSFET October 2014 FDMS86320 N-Channel PowerTrench MOSFET 80 V, 44 A, 11.7 m Features General Description Max r = 11.7 m at V = 10 V, I = 10.5 A DS(on) GS D This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max r = 15 m at V = 8 V, I = 8.5 A DS(on) GS D ringing of DC/DC converters using either synchronous or Advanced Package and Silicon combination for low r DS(on) conventional switching PWM controllers. It has been optimized and high efficiency for low gate charge, low r , fast switching speed and body DS(on) diode reverse recovery performance. Next generation enhanced body diode technology, engineered for soft recovery Applications MSL1 robust package design Primary DC-DC Switch 100% UIL Tested Motor Bridge Switch RoHS Compliant Synchronous Rectifier Bottom Top Pin 1 S D S S S D G S D S D D D G D D Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 80 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C 44 C I -Continuous T = 25 C (Note 1a) 10.5 A D A -Pulsed 160 E Single Pulse Avalanche Energy (Note 3) 60 mJ AS Power Dissipation T = 25 C 69 C P W D Power Dissipation T = 25 C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.8 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS86320 FDMS86320 Power 56 13 12 mm 3000 units 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDMS86320 Rev.C3