The IRF830B is a high-voltage, high-speed, N-Channel power MOSFET from ON Semiconductor. It features a breakdown voltage of 500V and a drain-source rating of 250V. The MOSFET has an on-resistance of 3.2mO and a maximum drain current of 7.5A. The bridge configuration allows the device to be used as a power switching and diode protection element. This MOSFET is commonly used in motor/relay/solenoid control, automotive/marine audio switching, and general power switching applications.