Product Information

IRF830B

IRF830B electronic component of ON Semiconductor

IRF830B
A medium-power MOSFET used in switching and amplifier applications.

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

617: USD 0.7164 ea
Line Total: USD 442.02

0 - Global Stock
MOQ: 617  Multiples: 617
Pack Size: 617
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 150
Multiples : 1

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IRF830B
ON Semiconductor

150 : USD 0.3393
850 : USD 0.3393
1750 : USD 0.3393
3500 : USD 0.3393
8900 : USD 0.3276
21750 : USD 0.2691

0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 617
Multiples : 617

Stock Image

IRF830B
ON Semiconductor

617 : USD 0.7164

     
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The IRF830B is a high-voltage, high-speed, N-Channel power MOSFET from ON Semiconductor. It features a breakdown voltage of 500V and a drain-source rating of 250V. The MOSFET has an on-resistance of 3.2mO and a maximum drain current of 7.5A. The bridge configuration allows the device to be used as a power switching and diode protection element. This MOSFET is commonly used in motor/relay/solenoid control, automotive/marine audio switching, and general power switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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