IRF830B ON Semiconductor

IRF830B electronic component of ON Semiconductor
IRF830B ON Semiconductor
IRF830B MOSFETs
IRF830B  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IRF830B MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF830B MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IRF830B
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: IRF830B
A medium-power MOSFET used in switching and amplifier applications.
Datasheet:
Price (USD)
617: USD 0.7164 ea
Line Total: USD 442.02 
Availability : 0
  
QtyUnit Price
617$ 0.7164

Availability 0
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 150
Multiples : 1
QtyUnit Price
150$ 0.3393
850$ 0.3393
1750$ 0.3393
3500$ 0.3393
8900$ 0.3276
21750$ 0.2691


Availability 0
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 617
Multiples : 617
QtyUnit Price
617$ 0.7164

   
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Product Category
RoHS - XON
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We are delighted to provide the IRF830B from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF830B and other electronic components in the MOSFETs category and beyond.

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The IRF830B is a high-voltage, high-speed, N-Channel power MOSFET from ON Semiconductor. It features a breakdown voltage of 500V and a drain-source rating of 250V. The MOSFET has an on-resistance of 3.2mO and a maximum drain current of 7.5A. The bridge configuration allows the device to be used as a power switching and diode protection element. This MOSFET is commonly used in motor/relay/solenoid control, automotive/marine audio switching, and general power switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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