Product Information

NTD5865NL-1G

NTD5865NL-1G electronic component of ON Semiconductor

Datasheet
MOSFET Single N-CH 60V 40A

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

225: USD 0.2897 ea
Line Total: USD 65.18

0 - Global Stock
MOQ: 225  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 225
Multiples : 1

Stock Image

NTD5865NL-1G
ON Semiconductor

225 : USD 0.2897
1050 : USD 0.2837
2175 : USD 0.2776
4575 : USD 0.2656
11400 : USD 0.2656
22725 : USD 0.2656

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Qg - Gate Charge
Configuration
Brand
Forward Transconductance - Min
Factory Pack Quantity :
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NTD5865NL N-Channel Power MOSFET 60 V, 46 A, 16 m Features Low Gate Charge Fast Switching NTD5865NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 55 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS V = 0 V, J GS V = 60 V DS T = 150C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 1.0 2.0 V GS(TH) GS DS D Negative Threshold Temperature V /T 5.6 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 10 V, I = 20 A 13 16 m DS(on) GS D DraintoSource on Resistance R V = 4.5 V, I = 20 A 16 19 m DS(on) GS D Forward Transconductance gFS V = 15 V, I = 20 A 15 S DS D CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance C 1400 pF iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 137 oss V = 25 V DS Reverse Transfer Capacitance C 95 rss Total Gate Charge Q 29 nC G(TOT) Threshold Gate Charge Q 1.1 G(TH) V = 10 V, V = 48 V, GS DS I = 40 A D GatetoSource Charge Q 4 GS GatetoDrain Charge Q 8 GD Total Gate Charge Q V = 4.5 V, V = 48 V, 15 nC G(TOT) GS DS I = 40 A D Gate Resistance R 1.3 G SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 8.4 ns d(on) Rise Time t 12.4 r V = 10 V, V = 48 V, GS DD I = 40 A, R = 2.5 D G Turn Off Delay Time t 26 d(off) Fall Time t 4.4 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.95 1.2 V SD V = 0 V, J GS I = 40 A S T = 125C 0.85 J Reverse Recovery Time t 20 ns RR Charge Time ta 13 V = 0 V, dIs/dt = 100 A/ s, GS I = 40 A S Discharge Time tb 7 Reverse Recovery Charge Q 13 nC RR 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Order Number Package Shipping NTD5865NL 1G IPAK (Straight Lead) 75 Units / Rail (Pb Free) NTD5865NLT4G DPAK 2500 / Tape & Reel (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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