MOSFET Power, Single N-Channel, TDFNW8 DUAL COOL 150 V, 4.45 m , 165 A NVMTSC4D3N15MC www.onsemi.com Features Small Footprint (8x8 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) V R MAX I MAX (BR)DSS DS(ON) D Low Q and Capacitance to Minimize Driver Losses G 150 V 4.45 m 10 V 165 A AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant D (5, 6, 7, 8) MAXIMUM RATINGS (T = 25C unless otherwise noted) J Symbol Parameter Value Unit G (1) V DraintoSource Voltage 150 V DSS S (2, 3, 4) V GatetoSource Voltage 20 V GS NCHANNEL MOSFET I Continuous Drain Steady T = 25C 165 A D C Current R (Note 2) State JC P Power Dissipation 292 W D R (Note 2) JC I Continuous Drain Steady T = 117 A D C Current R (Note 2) State 100C JC P Power Dissipation 146 W Top Bottom D R (Note 2) JC TDFNW8 I Continuous Drain Steady T = 25C 23 A CASE 507AS D A Current R State JA (Notes 1, 2) MARKING DIAGRAM P Power Dissipation 5 W D R (Notes 1, 2) JA Steady T = I Continuous Drain 16 A D A State 100C Current R JA (Notes 1, 2) P Power Dissipation 3 W D R (Notes 1, 2) JA 4D3N15M AWLYW I Pulsed Drain Current T = 25C, t = 10 s 900 A DM A p 4D3N15M = Specific Device Code A = Assembly Location T , T Operating Junction and Storage Temperature 55 to C J stg Range +175 WL = Wafer Lot Code Y = Year Code I Source Current (Body Diode) 243 A S W = Work Week Code E Single Pulse DraintoSource Avalanche 3390 mJ AS Energy (I = 14.1 A ,) L pk ORDERING INFORMATION T Lead Temperature Soldering Reflow for 260 C L Soldering Purposes (1/8 from case for 10 s) Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the NVMTSC4D3N15MC TDFNW8 3000 / Tape & device. If any of these limits are exceeded, device functionality should not be (PbFree) Reel assumed, damage may occur and reliability may be affected. 2 1. Surfacemounted on FR4 board using 1 in pad size, 1 oz Cu pad. For information on tape and reel specifications, 2. The entire application environment impacts the thermal resistance values shown, including part orientation and tape sizes, please they are not constants and are only valid for the particular conditions noted refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2020 1 Publication Order Number: December, 2020 Rev. 0 NVMTSC4D3N15MC/DNVMTSC4D3N15MC THERMAL RESISTANCE RATINGS Symbol Parameter Max Unit R JunctiontoCase Steady State (Note 2) 0.5 C/W JC R JunctiontoCase Top (Note 2) 0.8 JC JunctiontoAmbient Steady State (Note 2) 28 R JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS V Drain to Source Breakdown Voltage 150 V V = 0 V, I = 250 A (BR)DSS GS D V / T Drain to Source Breakdown Voltage I = 250 A, ref to 25C 49.84 mV/C (BR)DSS J D Temperature Coefficient I Zero Gate Voltage Drain Current V = 0 V, T = 25C 1 A DSS GS J V = 120 V DS T = 125C 10 A J I Gate to Source Leakage Current V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) V Gate Threshold Voltage V = V , I = 521 A 2.5 3.6 4.5 V GS(TH) GS DS D V / T Negative Threshold Temperature Coefficient 9.93 mV/C I = 250 A, ref to 25C GS(TH) J D R Drain to Source On Resistance V = 10 V, I = 95 A 3.4 4.45 m DS(on) GS D g Forward Transconductance V = 5 V, I = 95 A 177 S FS DS D R GateResistance T = 25C 1.1 G A CHARGES & CAPACITANCES C Input Capacitance V = 0 V, f = 1 MHz, 6514 pF ISS GS V = 75 V DS C Output Capacitance 1750 OSS C Reverse Transfer Capacitance 12.5 RSS Q Total Gate Charge V = 10 V, V = 75 V, 79 nC G(TOT) GS DS I = 95 A D Q Threshold Gate Charge 21 G(TH) Q GatetoSource Charge 36 GS Q GatetoDrain Charge 11 GD V Plateau Voltage 5.8 GP SWITCHING CHARACTERISTICS, V = 10 V (Note 3) GS t Turn On Delay Time V = 10 V, V =75 V, 38 ns d(ON) GS DS I = 95 A, R = 6 D G t Rise Time 11 r t Turn Off Delay Time 48 d(OFF) t Fall Time 8 f DRAINSOURCE DIODE CHARACTERISTICS V Forward Diode Voltage V = 0 V, T = 25C 0.86 1.2 V SD GS J I = 95 A S T = 125C 0.80 J t Reverse Recovery Time V = 0 V, dI /dt = 100 A/ s, 85 ns RR GS S I = 95 A S t Charge Time 58 a t Discharge Time 38 b Q Reverse Recovery Charge 194 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures www.onsemi.com 2