Product Information

BSO615C-G

Name: BSO615C-G
Brand: Renesas
SKU: BSO615CG_Renesas
Availability: OutOfStock
Rating: 5 (11 reviews)

BSO615C-G electronic component of Renesas

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See Product Specifications

MOSFET N & P Trench 60V 3.1A,2A 2V @ 20uA,2V @ 450uA 150 mÎ© @ 2.7A,4.5V;450 mÎ© @ 1.7A,4.5V PG-DSO-8 RoHS

Manufacturer: Renesas

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 3.2747 ea
Line Total: USD 3.27

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 24 May to Wed. 29 May MOQ : 1 Multiples : 1 BSO615C-G Renesas	1 : USD 3.2747 10 : USD 2.9112 30 : USD 2.6832 100 : USD 2.4934 500 : USD 2.2945 1000 : USD 2.2419

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Additional Infomation About Product

The BSO615C-G is a dual MOSFET N & P Trench with RoHS (Restriction of Hazardous Substances) certification manufactured by Renesas. It is rated for a 60V 3.1A and 2A voltage and a 20uA, 2V @ 450uA current with low on-resistance values of 150 mO @ 2.7A, 4.5V and 450 mO @ 1.7A, 4.5V. It comes in a PG-DSO-8 (plastic mini dual small outline) package. This MOSFET is intended for use in power switching applications such as motor control, power inverters and DC-DC converters.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Renesas may also be referenced as

CEL (RENESAS)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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Manufacturer Renesas Renesas
Product Category MOSFET MOSFET
Category MOSFET MOSFET
Rohs y y
Package PG - DSO - 8 PG - DSO - 8
Brand Category Renesas Renesas
Fet Type n amp; p trench n amp; p trench
Drain To Source Voltagevdss 60 V 60 V
Continuous Drain Current Id @ 25°C 3.1 A , 2 A 3.1 A , 2 A
Vgsth Max @ Id 2v @ 20ua,2v @ 450ua 2v @ 20ua,2v @ 450ua
Rds On Max @ Id Vgs 150 m @ 2.7a,4.5v;450 m @ 1.7a,4.5v 150 m @ 2.7a,4.5v;450 m @ 1.7a,4.5v
Power Dissipation Max 2 W 2 W
Drain Source Voltage Vdss - -
Continuous Drain Current Id - -
Drain Source On Resistance Rdson@Vgs Id - -
Power Dissipation Pd - -
Gate Threshold Voltage Vgsth@Id - -
Reverse Transfer Capacitance Crss@Vds - -
Type 1PCSN - Channelamp;1PCSP - Channel 1PCSN - Channelamp;1PCSP - Channel
Input Capacitance Ciss@Vds - -
Total Gate Charge Qg@Vgs - -