X-On Electronics has gained recognition as a prominent supplier of RB088NS100TL Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. RB088NS100TL Schottky Diodes & Rectifiers are a product manufactured by ROHM. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.
We are delighted to provide the RB088NS100TL from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RB088NS100TL and other electronic components in the Schottky Diodes & Rectifiers category and beyond.
RB088NS100 Schottky Barrier Diode Data sheet Outline V 100 V R I 10 A o I 100 A FSM Features Inner Circuit High reliability Power mold type Cathode common dual type Super Low I R Application Packaging Specifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 Structure Quantity(pcs) 1000 Silicon epitaxial planar Taping Code TL Marking RB088NS100 Absolute Maximum Ratings (T =25C unless otherwise specified) c Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty0.5 110 V RM Reverse voltage V Reverse direct voltage 100 V R 60Hz half sin waveformresistive load Average rectified forward current I 10 A o I /2 per diodeT =137Max. o c 60Hz half sin waveform Peak forward surge current I 100 A FSM non-repetitiveper diodeT =25 a Junction temperature T - 150 j Storage temperature T - -55 150 stg Attention www.rohm.com 1/6 2018- ROHM Co., Ltd. All rights reserved. 2019/05/27 Rev.003RB088NS100 Data sheet Electrical Characteristics (T =25C unless otherwise specified) j Parameter Symbol Conditions Min. Typ. Max. Unit (1) V Forward voltage I =5A - - 0.87 V F F (1) I V =100V Reverse current - - 5 A R R Note (1) Value per diode Thermal Characteristics Parameter Symbol Min. Typ. Max. Unit Per diode - - 1.4 /W (1) (2) R Thermal Resistance (Junction to case) JC Per device - - 0.85 /W (1) (3) R Thermal Resistance (Junction to ambient) - - 55 /W JA Notes (1) Value is guaranteed by design. (2) Transient dual interface measurement (TDIM) method. (3) Mounted on 50 x 50 x 1.6mm FR4 boardsingle-sided copper35m thicknessreference footprint. Characteristic Curves www.rohm.com 2/6 2018- ROHM Co., Ltd. All rights reserved. 2019/05/27 Rev.003