Product Information

RFN5TF6SFHC9

RFN5TF6SFHC9 electronic component of ROHM

Datasheet
Diodes - General Purpose, Power, Switching 600V VR 5A IO ITO-220AC; TO-220NFM

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.3595 ea
Line Total: USD 2.36

1711 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1706 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 1.6492
10 : USD 1.3527
100 : USD 1.0964
500 : USD 0.9563
1000 : USD 0.7653
3000 : USD 0.7653
5000 : USD 0.7653
10000 : USD 0.7368
25000 : USD 0.7166

     
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Hts Code
LoadingGif

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Super Fast Recovery Diode RFN5TF6SFH Datasheet AEC-Q101 Qualified Series Dimensions (Unit : mm) Structure Standard Fast Recovery Anode Cathode Applications General rectification RFN5 TF6S 1 2 Features 1) Low switching loss 2) High current overload capacity Construction ROHM : O220NFM Silicon epitaxial planar type 1 : Manufacture year 2 : Manufacture week Packing (Unit : mm) 7 540 Absolute Maximum Ratings (T = 25C) a Parameter Symbol Conditions Limits Unit V Duty0.5 600 Repetitive peak reverse voltage V RM Reverse voltage V Direct reverse voltage 600 V R I 60Hz half sin wave , resistive load Average current 5 A o 60Hz half sin wave, one cycle, Non-repetitive forward surge current I 30 A FSM non-repetitive at T=25C j Operating junction temperature T - 150 C j Storage temperature T - 55 to 150 C stg Electrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit I =5A Forward voltage V - 1.3 1.55 V F F I V =600V Reverse current -- 10 A R R I =0.5A, I =1A, Irr=0.25I Reverse recovery time trr - 28 50 ns F R R Thermal resistance R Junction to case -- 4.0 C / W th(j-c) www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.09 - Rev.A 1/4 34.5Data Sheet RFN5TF6SFH Electrical characteristic curves 100 100000 T = 125 C T = 150 C j j T = 150 C j 10000 T = 125 C j 10 1000 T = 75 C j 1 100 T = 75 C j T = 25 C j 10 0.1 T = 25 C j 1 T = 40 C j T = 40 C 0.01 j 0.1 0.001 0.01 0 500 1000 1500 2000 2500 0 100 200 300 400 500 600 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 f = 1MHz I FSM T = 25 C a 8.3ms 8.3ms 1cyc. 100 100 10 10 T = 25 C j 1 1 0 5 10 15 20 25 30 110 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.09 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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