Schottky Barrier Diode RSX501L-20 Data Sheet lApplication lDimensions (Unit : mm) lLand Size Figure (Unit : mm) General rectification 2.0 2.60.15 lFeatures 1) Small power mold type 0.10.02 1 2 PMDS (PMDS) Cathode 2.00.2 lStructure 2) High reliability 1.50.2 ROHM : PMDS Low V and low I 3) F R JEDEC : SOD-106 1 2 : Manufacture date Anode lConstruction lTaping Dimensions (Unit : mm) 2.00.05 4.00.1 0.3 f11..55550 .05 Silicon epitaxial planar type f11.5.555 2.90.1 4.00.1 2.8MAX lAbsolute Maximum Ratings (T = 25C) a Parameter Symbol Conditions Limits Unit Repetitive Peak Reverse Voltage V Duty0.5 25 V RM V Reverse Voltage Direct Reverse Voltage 20 V R Alumina board mounted, 60Hz half sin Wave, Average Forward Rectified Current I 5 A o resistive load, T =90Cmax. c 60Hz half sin wave, one cycle, Non-repetitive Forward Current Surge Peak I 70 A FSM non-repetitive at T =25C a Operating Junction Temperature T - 125 C j Storage Temperature T - -40 to +125 C stg lElectrical Characteristics (T = 25C) a Parameter Symbol Conditions Min. Typ. Max. Unit I =3.0A Forward Voltage V F - - 0.39 V F V =20V Reverse Current I - - 500 R mA R www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.12 - Rev.B 1/5 4.50.2 1.20.3 5.00.3 5.30.1 0.05 9.50.1 2.0 5.50.05 1.750.1 120.2 4.2 Data Sheet RSX501L-20 lElectrical Characteristic Curves 10 1000000 T = 125 C j 100000 T = 125 C T = 75 C j j 1 10000 T = 75 C j 0.1 1000 T = 25 C j 100 T = 25 C j 0.01 T = -25 C j 10 T = -25 C j 0.001 1 0 50 100 150 200 250 300 350 400 450 0 5 10 15 20 25 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 10000 365 T = 25 C T=25 C j j 360 f = 1MHz I =3.0A F n=30pcs 355 1000 350 345 Ave. : 336.1mV 340 100 335 330 10 325 0 10 20 30 REVERSE VOLTAGE : V (V) R V DISPERSION MAP F V -C CHARACTERISTICS R t www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.12 - Rev.B 2/5 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t REVERSE CURRENT : I ( mA) FORWARD VOLTAGE : V (mV) R F