Product Information

SH8K51GZETB

SH8K51GZETB electronic component of ROHM

Datasheet
MOSFET 4V Drive Nch+Nch MOSFET. SH8K51 is a power MOSFET with low-on resistance and High power package (SOP8), suitable for switching.

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0121 ea
Line Total: USD 1.01

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 2500
Multiples : 2500
2500 : USD 0.4592
5000 : USD 0.4592
10000 : USD 0.4402

     
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SH8K51 Datasheet 35V Nch+Nch Power MOSFET llOutline V 35V DSS R (Max.) 58m DS(on) SOP8 I 4.0A D P 2.0W D llFeatures llInner circuit 1) Low on - resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 330 Switching Tape width (mm) 12 Type Basic ordering unit (pcs) 2500 Taping code TB Marking SH8K51 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 35 V DSS Continuous drain current I 4.0 A D *1 I Pulsed drain current 16 A DP Gate - Source voltage V 20 V GSS *2 P 2.0 D Power dissipation (total) W *3 P 1.4 D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20170825 - Rev.002 2017 ROHM Co., Ltd. All rights reserved. SH8K51 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 62.5 thJA Thermal resistance, junction - ambient (total) /W *3 R - - 89.2 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 35 - - V (BR)DSS GS D voltage V (BR)DSS I = 1mA D Breakdown voltage - 37.3 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 35V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 0V, V = 20V - - 10 A GSS DS GS leakage current Gate threshold V V = 10V, I = 1mA 1.2 - 2.8 V GS(th) DS D voltage V I = 1mA GS(th) D Gate threshold voltage - -3.8 - mV/ temperature coefficient T j referenced to 25 V = 10V, I = 4.0A - 42 58 GS D Static drain - source *4 R V = 4.5V, I = 4.0A - 60 84 m DS(on) GS D on - state resistance V = 4.0V, I = 4.0A - 70 98 GS D R Gate resistance f = 1MHz, open drain - 6.3 - G Forward Transfer *4 Y V = 10V, I = 4.0A 2.5 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2/11 20170825 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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