Product Information

SH8KA4TB

SH8KA4TB electronic component of ROHM

Datasheet
MOSFET 30V Nch+Nch Si MOSFET

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2825 ea
Line Total: USD 1.28

2324 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2326 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

SH8KA4TB
ROHM

1 : USD 0.6573
10 : USD 0.5517
100 : USD 0.4497
500 : USD 0.4094
1000 : USD 0.4058
2500 : USD 0.4046

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
SH8M14TB1 electronic component of ROHM SH8M14TB1

ROHM Semiconductor MOSFET 4V DRIVE TYP NP CH MID PWR MOSFET
Stock : 2389

SH8M24TB1 electronic component of ROHM SH8M24TB1

Mosfet Array N and P-Channel 45V 4.5A, 3.5A 2W Surface Mount 8-SOP
Stock : 1996

SH8M2TB1 electronic component of ROHM SH8M2TB1

MOSFET Nch+Pch 30V/-30V 3.5A/-3.5A; MOSFET
Stock : 0

SH8M3TB1 electronic component of ROHM SH8M3TB1

MOSFET Nch+Pch 30V/-30V 5A/-4.5A; MOSFET
Stock : 0

SH8M41GZETB electronic component of ROHM SH8M41GZETB

MOSFET 4V Drive Nch+Pch MOSFET SOP8 Nch+Pch
Stock : 0

SH8M13GZETB electronic component of ROHM SH8M13GZETB

MOSFET 4V Drive Nch+Pch Si MOSFET
Stock : 317

SH8M13TB1 electronic component of ROHM SH8M13TB1

MOSFET N & P Trench 30V 6A,7A 2.5V @ 1mA 31 mΩ @ 6A,10V;29 mΩ @ 7A,10V SOP-8 RoHS
Stock : 0

SH8KA7GZETB electronic component of ROHM SH8KA7GZETB

MOSFET 30V NCH+NCH POWER
Stock : 2518

SH8M24GZETB electronic component of ROHM SH8M24GZETB

MOSFET 45V NCH+PCH POWER
Stock : 2382

SH8M31GZETB electronic component of ROHM SH8M31GZETB

MOSFET 60V NCH+PCH POWER
Stock : 2013

Image Description
SI4435DYTRPBF electronic component of Infineon SI4435DYTRPBF

MOSFET P Trench 30V 8A 1V @ 250uA 20 mΩ @ 8A,10V SOIC-8_150mil RoHS
Stock : 7316

STD10N60DM2 electronic component of STMicroelectronics STD10N60DM2

MOSFET POWER MOSFET
Stock : 0

STD180N4F6 electronic component of STMicroelectronics STD180N4F6

MOSFET N-channel 40 V, 3.8 mOhm typ., 120 A STripFET F6 Power MOSFET in a DPAK package
Stock : 0

STE139N65M5 electronic component of STMicroelectronics STE139N65M5

MOSFET N-channel 650 V, 0.014 Ohm typ., 130 A, MDmesh M5 Power MOSFET in a ISOTOP package
Stock : 0

STFU23N80K5 electronic component of STMicroelectronics STFU23N80K5

MOSFET N-channel 800 V, 0.23 Ohm typ., 16 A MDmesh K5 Power MOSFET in a TO-220FP ultra narrow leads package
Stock : 0

STL130N6F7 electronic component of STMicroelectronics STL130N6F7

MOSFET N-channel 60 V, 3 mOhm typ., 130 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
Stock : 9086

STL13N60DM2 electronic component of STMicroelectronics STL13N60DM2

MOSFET POWER MOSFET
Stock : 0

STL33N60DM2 electronic component of STMicroelectronics STL33N60DM2

MOSFET N-channel 600 V, 0.115 Ohm typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package
Stock : 0

STL7N6F7 electronic component of STMicroelectronics STL7N6F7

MOSFET N-channel 60 V, 0.019 Ohm typ., 7 A STripFET F7 Power MOSFET in a PowerFLAT 2x2 package
Stock : 6000

STP11N60DM2 electronic component of STMicroelectronics STP11N60DM2

MOSFET POWER MOSFET
Stock : 0

SH8KA4 Datasheet 30V Nch+Nch Power MOSFET llOutline V 30V DSS R (Max.) 21.4m DS(on) SOP8 I 9.0A D P 3.0W D llFeatures llInner circuit 1) Low on - resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free 5) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 330 Switching Tape width (mm) 12 Type Car Accessory (Navigation, Audio,etc) Quantity (pcs) 2500 Taping code TB Marking SH8KA4 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS *1 I Continuous drain current 9.0 A D *2 I Pulsed drain current 18 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 8.0 A AS *3 E Avalanche energy, single pulse 4.6 mJ AS *1 P 3.0 D *4 P Power dissipation (total) 2.0 W D *5 P 1.4 D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20190527 - Rev.005 2019 ROHM Co., Ltd. All rights reserved. SH8KA4 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R - - 62.5 thJA Thermal resistance, junction - ambient (total) /W *5 R - - 89.2 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V (BR)DSS I = 1mA D Breakdown voltage - 21 - mV/ temperature coefficient T j referenced to 25 Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 20V, V = 0V - - 100 nA GSS GS DS leakage current Gate threshold V V = V , I = 1mA 1.0 - 2.5 V GS(th) DS GS D voltage V I = 1mA GS(th) D Gate threshold voltage - -3 - mV/ temperature coefficient T j referenced to 25 V = 10V, I = 9.0A - 16.5 21.4 GS D Static drain - source *6 R m DS(on) on - state resistance V = 4.5V, I = 8.0A - 22.2 28.9 GS D Gate resistance R f = 1MHz, open drain - 3.4 - G Forward Transfer *6 Y V = 5V, I = 8.0A 4.6 - - S fs DS D Admittance *1 Pw 1s, Mounted on a ceramic board (30300.8mm), Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 0.1mH, V = 15V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a ceramic board (30300.8mm) *5 Mounted on a Cu board (40400.8mm) *6 Pulsed www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2/11 20190527 - Rev.005

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted