X-On Electronics has gained recognition as a prominent supplier of SIF10N65E MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIF10N65E MOSFETs are a product manufactured by SI. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIF10N65E SI

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Part No.	SIF10N65E
Manufacturer:	SI
Category:	MOSFETs
Description:	TO-220FP MOSFETs ROHS
Datasheet:	SIF10N65E Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.5897 ea
Line Total: USD 0.59

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

SIF10N65E More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Mon. 23 Jun to Thu. 26 Jun MOQ : 1 Multiples : 1	1 : USD 0.5897 10 : USD 0.4746 50 : USD 0.4261 100 : USD 0.3656 500 : USD 0.3252 1000 : USD 0.3091

Specifications

Manufacturer SI SI
Product Category MOSFETs MOSFETs
Category MOSFET MOSFET
Rohs y y

We are delighted to provide the SIF10N65E from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIF10N65E and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

EMENSThe SIF10N65E with TO-220FP MOSFETs ROHS manufactured by SIEMENS is an N-channel enhancement mode power field-effect transistor. It has a drain current up to 10A, drain-source voltage up to 650V, and a maximum power dissipation of 83W. It is designed to operate in low-side switching applications with very high efficiency, and features very low on-resistance which is critical in supplying power to loads requiring high efficiency. The TO-220FP package is designed for use in high-power applications and features a long copper clip for better conductivity and power dissipation. This device is RoHS compliant and manufactured by Siemens, a leading global supplier of electrical and electronic products.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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