SE8N65A SINO-IC

SE8N65A electronic component of SINO-IC
SE8N65A SINO-IC
SE8N65A MOSFETs
SE8N65A  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SE8N65A MOSFETs across the USA, India, Europe, Australia, and various other global locations. SE8N65A MOSFETs are a product manufactured by SINO-IC. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SE8N65A
Manufacturer: SINO-IC
Category: MOSFETs
Description: TO-220F MOSFETs ROHS
Datasheet: SE8N65A Datasheet (PDF)
Price (USD)
5: USD 0.2602 ea
Line Total: USD 1.3 
Availability : 0
  
QtyUnit Price
5$ 0.2602
50$ 0.2255
150$ 0.2218
500$ 0.2184

Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.2602
50$ 0.2255
150$ 0.2218
500$ 0.2184

   
Manufacturer
Product Category
Category
Rohs
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SE8N65A from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SE8N65A and other electronic components in the MOSFETs category and beyond.

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The SE8N65A is a metal-oxide-semiconductor field-effect transistor (MOSFET), designed and manufactured by SINO-IC. It is a high-voltage N-channel MOSFET that is housed in a TO-220F package and is RoHS compliant. This MOSFET is designed for applications such as switching regulators, motor control, switching relays, lamp control, and pulse transformers. It features a maximum breakdown voltage of 650 volts, a maximum drain current of 8 amps, and a maximum gate-source voltage of 20 volts. It is designed for use in industrial applications and is suitable for applications that require high voltage and high current ratings.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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