Product Information

STFI13NK60Z

STFI13NK60Z electronic component of STMicroelectronics

Datasheet
N-Channel 600 V 13A (Tc) 35W (Tc) Through Hole I2PAKFP (TO-281)
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

STFI13NK60Z
STMicroelectronics

1 : USD 3.8625
10 : USD 3.3276
100 : USD 2.7257
500 : USD 2.3202
1000 : USD 1.9569
N/A

Obsolete
0 - WHS 2

MOQ : 1500
Multiples : 1

Stock Image

STFI13NK60Z
STMicroelectronics

1500 : USD 1.6928
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

STFI13NK60Z N-channel 600 V, 0.48 , 13 A, Zener-protected SuperMESH Power MOSFET in IPAKFP package Datasheet production data Features R DS(on) Order code V I P DSS D TOT max STFI13NK60Z 600 V <0.55 13 A 35 W Fully insulated and low profile package with increased creepage path from pin to heatsink plate 1 Gate charge minimized 2 3 Very low intrinsic capacitance 2 I PAKFP (TO-281) Applications Switching applications Figure 1. Internal schematic diagram D(2) Description This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics SuperMESH technology, achieved through optimization of ST s well G(1) established strip-based PowerMESH layout. In addition to a significant reduction in on- resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. S(3) AM01476v1 Table 1. Device summary Order code Marking Package Packaging IPAKFP STFI13NK60Z 13NK60Z Tube (TO-281) March 2012 Doc ID 018969 Rev 3 1/13 This is information on a product in full production. www.st.com 13Contents STFI13NK60Z Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 12 2/13 Doc ID 018969 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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