Product Information

STFI13NM60N

STFI13NM60N electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET N-Ch 600V 0.28 Ohm 11A MDmesh II
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

6: USD 1.433 ea
Line Total: USD 8.6

2418 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 6  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2418 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

STFI13NM60N
STMicroelectronics

1 : USD 1.449

2418 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 6
Multiples : 1

Stock Image

STFI13NM60N
STMicroelectronics

6 : USD 1.433

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Channel Mode
Gate-Source Voltage Max
Power Dissipation
Mounting
Continuous Drain Current
Type
Operating Temp Range
Pin Count
Polarity
Operating Temperature Classification
Drain-Source On-Volt
Number Of Elements
Rad Hardened
Configuration
Series
Transistor Type
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

STFI13NM60N N-channel 600 V, 0.28 , 11 A MDmesh II Power MOSFET in IPAKFP package Datasheet production data Features V R DSS DS(on) Type I P D TOT ( Tjmax) max STFI13NM60N 650 V < 0.36 11 A 25 W Fully insulated and low profile package with increased creepage path from pin to heatsink plate 100% avalanche tested 1 Low input capacitance and gate charge 2 3 Low gate input resistance IPAKFP (TO-281) Applications Switching applications Description Figure 1. Internal schematic diagram This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 3 Table 1. Device summary Order codes Marking Packages Packaging 2 I PAKFP STFI13NM60N 13NM60N Tube (TO-281) May 2012 Doc ID 018960 Rev 4 1/12 This is information on a product in full production. www.st.com 12Contents STFI13NM60N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 Doc ID 018960 Rev 4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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