STFI13NM60N STMicroelectronics

STFI13NM60N N-channel 600 V, 0.28 , 11 A MDmesh II Power MOSFET in IPAKFP package Datasheet production data Features V R DSS DS(on) Type I P D TOT ( Tjmax) max STFI13NM60N 650 V < 0.36 11 A 25 W Fully insulated and low profile package with increased creepage path from pin to heatsink plate 100% avalanche tested 1 Low input capacitance and gate charge 2 3 Low gate input resistance IPAKFP (TO-281) Applications Switching applications Description Figure 1. Internal schematic diagram This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 3 Table 1. Device summary Order codes Marking Packages Packaging 2 I PAKFP STFI13NM60N 13NM60N Tube (TO-281) May 2012 Doc ID 018960 Rev 4 1/12 This is information on a product in full production. www.st.com 12Contents STFI13NM60N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 Doc ID 018960 Rev 4