Product Information

STGB30H60DLFB

STGB30H60DLFB electronic component of STMicroelectronics

Datasheet
IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 1.0109 ea
Line Total: USD 1010.9

0 - Global Stock
MOQ: 1000  Multiples: 1000
Pack Size: 1000

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1000
Multiples : 1

Stock Image

STGB30H60DLFB
STMicroelectronics

1000 : USD 0

0 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1000
Multiples : 1000

Stock Image

STGB30H60DLFB
STMicroelectronics

1000 : USD 1.0109

0 - WHS 3


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

STGB30H60DLFB
STMicroelectronics

1 : USD 8.4403
10 : USD 3.0447
25 : USD 2.8686

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

STGB30H60DLFB, STGW30H60DLFB Trench gate field-stop IGBT, HB series 600 V, 30 A high speed Datasheet - production data Features Designed for soft commutation only Maximum junction temperature: T = 175 C J TAB High speed switching series Minimized tail current 3 1 3 V = 1.55 V (typ.) I = 30 A CE(sat) C 2 2 D PAK 1 Low V soft recovery co-packaged diode F TO-247 Tight parameters distribution Safe paralleling Low thermal resistance Lead free package Figure 1. Internal schematic diagram Applications C (2, TAB) Microwave oven Resonant converters Description G (1) These devices are IGBTs developed using an advanced proprietary trench gate and field stop structure. The device is part of the newH series of IGBTs, which represent an optimum compromise between conduction and switching E (3) losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive V temperature coefficient and very CE(sat) tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packaging 2 STGB30H60DLFB GB30H60DLFB D PAK Tape and reel STGW30H60DLFB GW30H60DLFB TO-247 Tube July 2014 DocID026409 Rev 2 1/20 This is information on a product in full production. www.st.com 20Contents STGB30H60DLFB, STGW30H60DLFB Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curve) . 6 3 Test circuits 11 4 Package mechanical data 12 2 4.1 D PAK, STGB30H60DLFB 12 4.2 TO-247, STGW30H60DLFB . 15 5 Packaging mechanical data 17 6 Revision history . 19 2/20 DocID026409 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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