STGF20H65DFB2 STMicroelectronics

STGF20H65DFB2 Datasheet Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO220FP package Features Maximum junction temperature : T = 175 C J Low V = 1.65 V (typ.) I = 20 A CE(sat) C Very fast and soft recovery co-packaged diode Minimized tail current 3 2 1 Tight parameter distribution TO-220FP Low thermal resistance Positive V temperature coefficient CE(sat) C (2) Applications Welding G (1) Power factor correction UPS Solar inverters Chargers Sc12850 no tab E (3) Description The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better V behavior at low current CE(sat) values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications. Product status link STGF20H65DFB2 Product summary Order code STGF20H65DFB2 Marking G20H65DFB2 Package TO-220FP Packing Tube DS13342 - Rev 1 - May 2020 www.st.com For further information contact your local STMicroelectronics sales office.STGF20H65DFB2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 650 V CES GE Continuous collector current at T = 25 C 40 A C (1) I C Continuous collector current at T = 100 C 25 A C (2)(3) I Pulsed collector current 60 A CP Gate-emitter voltage 20 V V GE Transient gate-emitter voltage (t 10 s) 30 p Continuous forward current at T = 25 C 40 C (1) I A F Continuous forward current at T = 100 C 23 C (2)(3) I Pulsed forward current 60 A FP Insulation withstand voltage (RMS) from all three leads to external heat sink V 2.5 kV ISO (t = 1 s, T = 25 C) C P Total power dissipation at T = 25 C 45 W TOT C T Storage temperature range -55 to 150 C STG T Operating junction temperature range -55 to 175 C J 1. Limited by maximum junction temperature. 2. Pulse width is limited by maximum junction temperature. 3. Defined by design, not subject to production test. Table 2. Thermal data Symbol Parameter Value Unit Thermal resistance junction-case IGBT 3.3 R thJC Thermal resistance junction-case diode 5.8 C/W R Thermal resistance junction-ambient 62.5 thJA DS13342 - Rev 1 page 2/15