STGW50HF60S STMicroelectronics

STGW50HF60S 60 A, 600 V, very low drop IGBT Features Very low on-state voltage drop Low switching off High current capability Applications 3 2 PV inverter 1 UPS TO-247 Description STGW50HF60S is a very low drop IGBT based on new advanced planar technology, showing Figure 1. Internal schematic diagram extremely low on-state voltage and limited turn-off losses. The overall performance makes this IGBT ideal in low frequency switches of mixed frequency topologies for PF 1. Table 1. Device summary Order code Marking Package Packaging STGW50HF60S GW50HF60S TO-247 Tube January 2011 Doc ID 16989 Rev 2 1/11 www.st.com 11Electrical ratings STGW50HF60S 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 600 V CES GE (1) I Continuous collector current at T = 25 C 110 A C C (1) I Continuous collector current at T = 100 C 60 A C C (2) I Turn-off latching current 60 A CL (3) I Pulsed collector current 130 A CP V Gate-emitter voltage 20 V GE P Total dissipation at T = 25 C 284 W TOT C T Operating junction temperature - 55 to 150 C j 1. Calculated according to the iterative formula: T T jm()ax C I()T = ------------------------------------------------------------------------------------------------------- C C R V ()T , I()T thj c CE()sat()max jm()ax C C 2. Vclamp = 80% of V , T =150 C, R =10 , V =15 V CES j G GE 3. Pulse width limited by maximum junction temperature and turn-off within RBSOA Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.44 C/W thJC R Thermal resistance junction-ambient 50 C/W thJA 2/11 Doc ID 16989 Rev 2