Product Information

STGW45NC60VD

Name: STGW45NC60VD
Brand: STMicroelectronics
SKU: STGW45NC60VD_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STGW45NC60VD electronic component of STMicroelectronics

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Datasheet

IGBT Transistors 45 A - 600 V Very Fast IGBT

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

30: USD 4.0367 ea
Line Total: USD 121.1

0 - Global Stock

MOQ: 30 Multiples: 30
Pack Size: 30

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Mon. 27 May to Fri. 31 May MOQ : 30 Multiples : 30 STGW45NC60VD STMicroelectronics	30 : USD 4.0367 120 : USD 3.5188 270 : USD 3.3595

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Additional Infomation About Product

STGW45NC60VD 45 A - 600 V - very fast IGBT Features Low C / C ratio (no cross conduction RES IES susceptibility) IGBT co-packaged with ultra fast free-wheeling diode Applications 3 2 1 High frequency inverters UPS TO-247 long leads Motor drivers Induction heating Description Figure 1. Internal schematic diagram This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low on-state behavior. Table 1. Device summary Order code Marking Package Packaging STGW45NC60VD GW45NC60VD TO-247 long leads Tube March 2008 Rev 1 1/15 www.st.com 15Contents STGW45NC60VD Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 7 2.2 Frequency applications . 9 3 Test circuit . 11 4 Package mechanical data 12 5 Revision history . 14 2/15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category IGBT Transistors IGBT Transistors
RoHS - XON Y Y
Configuration Single Single
Collector- Emitter Voltage VCEO Max 600 V 600 V
Collector-Emitter Saturation Voltage 2.4 V 2.4 V
Maximum Gate Emitter Voltage +/- 20 V +/- 20 V
Continuous Collector Current at 25 C 90 A 90 A
Gate-Emitter Leakage Current 100 nA 100 nA
Power Dissipation 270 W 270 W
Package / Case TO - 247 - 3 TO - 247 - 3
Packaging Tube Tube
Mounting Style Through Hole Through Hole
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Series Stgw45nc60vd Stgw45nc60vd
Continuous Collector Current Ic Max 90 A 90 A
Brand Stmicroelectronics Stmicroelectronics
Factory Pack Quantity : 30 30