STGW80H65DFB-4 Datasheet Trench gate field-stop 650 V, 80 A high speed HB series IGBT Features V = 1.6 V (typ.) I = 80 A CE(sat) C Maximum junction temperature: T = 175 C J High speed switching series Minimized tail current 4 3 Tight parameter distribution 2 1 Safe paralleling TO247-4 Low thermal resistance Very fast soft recovery antiparallel diode C(1, TAB) Excellent switching performance thanks to the extra driving kelvin pin G(4) Applications K(3) Photovoltaic inverters High frequency converters E(2) NG4K3E2C1 TAB Description This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. A faster switching event can be achieved by the Kelvin pin, which separates power path from driving signal. Furthermore, the slightly positive V temperature coefficient and very tight parameter distribution CE(sat) result in safer paralleling operation. Product status link STGW80H65DFB-4 Product summary Order code STGW80H65DFB-4 Marking G80H65DFB Package TO247-4 Packing Tube DS11137 - Rev 5 - December 2021 www.st.com For further information contact your local STMicroelectronics sales office. STGW80H65DFB-4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 650 V CES GE (1) Continuous collector current at T = 25 C 120 C I A C Continuous collector current at T = 100 C 80 C (2) I Pulsed collector current (t 1 s, T < 175 C) 300 A p J CP Gate-emitter voltage 20 V V GE Transient gate-emitter voltage 30 V (1) Continuous forward current at T = 25 C 120 C I A F Continuous forward current at T = 100 C 80 C (2) I Pulsed forward current (t 1 s, T < 175 C) 300 A p J FP P Total power dissipation at T = 25 C 470 W TOT C T Storage temperature range - 55 to 150 STG C T Operating junction temperature range - 55 to 175 J 1. Current level is limited by bond wires 2. Defined by design, not subject to production test. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case IGBT 0.32 thJC R Thermal resistance junction-case diode 0.66 C/W thJC R Thermal resistance junction-ambient 50 thJA DS11137 - Rev 5 page 2/15