STGWA15S120DF3 STMicroelectronics

STGW15S120DF3, STGWA15S120DF3 Trench gate field-stop IGBT, S series 1200 V, 15 A low drop Datasheet - production data Features 10 s of short-circuit withstand time V = 1.55 V (typ.) I = 15 A CE(sat) C Tight parameter distribution Safer paralleling Low thermal resistance Soft and fast recovery antiparallel diode 2 7 2 ORQJ OHDGV 7 Applications Industrial drives UPS Figure 1. Internal schematic diagram Solar % 7 & RU Welding Description This device is an IGBT developed using an advanced proprietary trench gate field-stop * structure. The device is part of the S series of 1200 V IGBTs which is tailored to maximize efficiency of low frequency industrial systems. Furthermore, a positive V temperature CE(sat) coefficient and tight parameter distribution result in safer paralleling operation. ( Table 1. Device summary Order code Marking Package Packing STGW15S120DF3 G15S120DF3 TO-247 Tube STGWA15S120DF3 G15S120DF3 TO-247 long leads Tube December 2014 DocID026371 Rev 2 1/18 This is information on a product in full production. www.st.comContents STGW15S120DF3, STGWA15S120DF3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 3 Electrical characteristics curves . 6 4 Test circuits 12 5 Package information 13 5.1 TO-247, STGW15S120DF3 . 13 5.2 TO-247 long leads, STGWA15S120DF3 . 15 6 Revision history . 17 2/18 DocID026371 Rev 2