Product Information

STGWA15S120DF3

STGWA15S120DF3 electronic component of STMicroelectronics

Datasheet
STMicroelectronics IGBT Transistors
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

9: USD 4.2872 ea
Line Total: USD 38.58

0 - Global Stock
MOQ: 9  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 600
Multiples : 1

Stock Image

STGWA15S120DF3
STMicroelectronics

600 : USD 3.2861

0 - WHS 2


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

STGWA15S120DF3
STMicroelectronics

1 : USD 8.5477
10 : USD 5.8105
25 : USD 5.5314
100 : USD 5.1381
250 : USD 4.9098
500 : USD 4.7702
1000 : USD 4.415
2500 : USD 4.415
5000 : USD 4.2374

0 - WHS 3


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 9
Multiples : 1

Stock Image

STGWA15S120DF3
STMicroelectronics

9 : USD 4.2872
10 : USD 2.9043

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Additional Infomation About Product

STGW15S120DF3, STGWA15S120DF3 Trench gate field-stop IGBT, S series 1200 V, 15 A low drop Datasheet - production data Features 10 s of short-circuit withstand time V = 1.55 V (typ.) I = 15 A CE(sat) C Tight parameter distribution Safer paralleling Low thermal resistance Soft and fast recovery antiparallel diode 2 7 2 ORQJ OHDGV 7 Applications Industrial drives UPS Figure 1. Internal schematic diagram Solar % 7 & RU Welding Description This device is an IGBT developed using an advanced proprietary trench gate field-stop * structure. The device is part of the S series of 1200 V IGBTs which is tailored to maximize efficiency of low frequency industrial systems. Furthermore, a positive V temperature CE(sat) coefficient and tight parameter distribution result in safer paralleling operation. ( Table 1. Device summary Order code Marking Package Packing STGW15S120DF3 G15S120DF3 TO-247 Tube STGWA15S120DF3 G15S120DF3 TO-247 long leads Tube December 2014 DocID026371 Rev 2 1/18 This is information on a product in full production. www.st.comContents STGW15S120DF3, STGWA15S120DF3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 3 Electrical characteristics curves . 6 4 Test circuits 12 5 Package information 13 5.1 TO-247, STGW15S120DF3 . 13 5.2 TO-247 long leads, STGWA15S120DF3 . 15 6 Revision history . 17 2/18 DocID026371 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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