Product Information

STGWA15H120F2

STGWA15H120F2 electronic component of STMicroelectronics

Datasheet
IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 600
Multiples : 1

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STGWA15H120F2
STMicroelectronics

600 : USD 2.8187
1000 : USD 2.7225
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

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STGWA15H120F2
STMicroelectronics

1 : USD 7.2119
10 : USD 2.5764
100 : USD 2.2879
500 : USD 2.1089
1000 : USD 1.9397
5000 : USD 1.8303
10000 : USD 1.7905
N/A

Obsolete
0 - WHS 3

MOQ : 18
Multiples : 1

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STGWA15H120F2
STMicroelectronics

18 : USD 2.4458
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
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Additional Infomation About Product

STGW15H120F2, STGWA15H120F2 Trench gate field-stop IGBT, H series 1200 V, 15 A high speed Datasheet - production data Features Maximum junction temperature: T = 175 C J High speed switching series Minimized tail current V = 2.1 V (typ.) I = 15 A CE(sat) C 5 s minimum short-circuit withstand time at T =150 C J Safe paralleling 2 7 2 ORQJ OHDGV 7 Low thermal resistance Applications Figure 1. Internal schematic diagram Uninterruptible power supply Welding machines & Photovoltaic inverters Power factor correction High frequency converters * Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the improved 6& ( H series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of high frequency converters. Furthermore, a slightly positive V temperature coefficient and very tight CE(sat) parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packing STGW15H120F2 G15H120F2 TO-247 Tube STGWA15H120F2 G15H120F2 TO-247 long leads Tube April 2015 DocID026013 Rev 5 1/17 This is information on a product in full production. www.st.com 17Contents STGW15H120F2, STGWA15H120F2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 11 4 Package information 12 4.1 TO-247 package information 12 4.2 TO-247 long leads, package information . 14 5 Revision history . 16 2/17 DocID026013 Rev 5

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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