Product Information

STGWA30H65DFB

STGWA30H65DFB electronic component of STMicroelectronics

Datasheet
IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed in a TO-247 long leads package

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.8956 ea
Line Total: USD 4.9

22 - Global Stock
Ships to you between
Thu. 23 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
22 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

STGWA30H65DFB
STMicroelectronics

1 : USD 4.758
3 : USD 4.277
5 : USD 3.549
13 : USD 3.354

     
Manufacturer
Product Category
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Product Type
Factory Pack Quantity :
Subcategory
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.The STGWA30H65DFB is an integrated switching power management solution designed and manufactured by STMicroelectronics. It is a field-stop IGBT (Insulated Gate Bipolar Transistor) of the HB series, in a TO-247 package with long leads. This IGBT has a breakdown voltage of 650V, and a current rating of 30A. The design utilizes Trench gate technology to ensure high speed switching and to reduce switching losses. This IGBT is suitable for high frequency circuits and applications, and is a dependable choice for many power conversion applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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