STGWA30H65FB STMicroelectronics

STGWA30H65FB Trench gate field-stop IGBT, HB series 650 V, 30 A high-speed in a TO-247 long leads package Datasheet - production data Features Maximum junction temperature: T = 175 C J High-speed switching series Minimized tail current VCE(sat) = 1.55 V(typ) IC = 30 A Safe paralleling Tight parameter distribution Low thermal resistance Applications Photovoltaic inverters High-frequency converters Figure 1: Internal schematic diagram Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packing STGWA30H65FB GWA30H65FB TO-247 long leads Tube May 2017 DocID030595 Rev 1 1/14 www.st.com This is information on a product in full production. Contents STGWA30H65FB Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 10 4 Package information ..................................................................... 11 4.1 TO-247 long leads package information ......................................... 11 5 Revision history ............................................................................ 13 2/14 DocID030595 Rev 1