GT30J122A(STA1,E,D Toshiba

GT30J122A(STA1,E,D electronic component of Toshiba
GT30J122A(STA1,E,D Toshiba
GT30J122A(STA1,E,D IGBT Transistors
GT30J122A(STA1,E,D  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of GT30J122A(STA1,E,D IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. GT30J122A(STA1,E,D IGBT Transistors are a product manufactured by Toshiba. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No. GT30J122A(STA1,E,D
Manufacturer: Toshiba
Category: IGBT Transistors
Description: IGBTs TO-3PN RoHS
Datasheet: GT30J122A(STA1,E,D Datasheet (PDF)
Price (USD)
1: USD 3.1042 ea
Line Total: USD 3.1 
Availability : 182
  
Ship by Fri. 24 Oct to Thu. 30 Oct
QtyUnit Price
1$ 3.1042
10$ 1.9798
25$ 1.441
100$ 1.2393
500$ 1.1494
1000$ 1.1092

Availability 182
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.1042
10$ 1.9798
25$ 1.441
100$ 1.2393
500$ 1.1494
1000$ 1.1092

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the GT30J122A(STA1,E,D from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GT30J122A(STA1,E,D and other electronic components in the IGBT Transistors category and beyond.

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The GT30J122A(STA1,E,D with IGBTs TO-3PN RoHS is a power model transistor manufactured by Toshiba. It is designed for use in power applications that require switching and high frequency amplifying. The GT30J122A(STA1,E,D is a three pin, TO-3PN RoHS package and it includes two discrete insulated gate bipolar transistors (IGBTs) for enhanced efficiency and performance. The insulation gate doors allow for a higher level of performance than traditional bipolar transistors. This device has a maximum collector-base voltage of 600 V and a maximum continuous forward current of 30A. It also has a maximum collector current of 45A and a maximum switching frequency of 15 kHz. It is compliant with the RoHS directive and is ideal for applications that need high speed and high efficiency.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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