STGWT80V60F STMicroelectronics

STGFW80V60F, STGW80V60F, STGWT80V60F Trench gate field-stop IGBT, V series 600 V, 80 A very high speed Datasheet - production data Features Maximum junction temperature: T = 175 C J 111 Tail-less switching off 3 V = 1.85 V (typ.) I = 80 A CE(sat) C 2 1 Tight parameters distribution TAB TO-3PF Safe paralleling Low thermal resistance 3 3 Applications 2 2 1 1 TO-247 Photovoltaic inverters TO-3P Uninterruptible power supply Figure 1. Internal schematic diagram Welding C (2 or TAB) Power factor correction Very high frequency converters Description This device is an IGBT developed using an G (1) advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive V CE(sat) E (3) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packaging STGFW80V60F GFW80V60F TO-3PF Tube STGW80V60F GW80V60F TO-247 Tube STGWT80V60F GWT80V60F TO-3P Tube May 2014 DocID026386 Rev 1 1/19 This is information on a product in full production. www.st.com 19Contents STGFW80V60F, STGW80V60F, STGWT80V60F Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 11 4 Package mechanical data 12 4.1 TO-3PF, STGFW80V60F . 12 4.2 TO-247, STGW80V60F 14 4.3 TO-3P, STGWT80V60F 16 5 Revision history . 18 2/19 DocID026386 Rev 1