STGY80H65DFB STMicroelectronics

STGW80H65DFB, STGWT80H65DFB Datasheet Trench gate field-stop 650 V, 80 A high speed HB series IGBT Features Maximum junction temperature: T = 175 C J TAB High speed switching series Minimized tail current 3 2 Low saturation voltage: V = 1.6 V (typ.) I = 80 A 3 CE(sat) C 1 2 1 Tight parameter distribution TO-247 TO-3P Safe paralleling Positive V temperature coefficient CE(sat) Low thermal resistance Very fast soft recovery antiparallel diode Applications Photovoltaic inverters High frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate field- stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive V temperature coefficient and very tight parameter distribution result in safer CE(sat) paralleling operation. Product status link STGW80H65DFB STGWT80H65DFB Product summary Order code STGW80H65DFB Marking GW80H65DFB Package TO-247 Packing Tube Order code STGWT80H65DFB Marking GWT80H65DFB Package TO-3P Packing Tube DS9536 - Rev 9 - June 2019 www.st.com For further information contact your local STMicroelectronics sales office.STGW80H65DFB, STGWT80H65DFB Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 650 V CES GE (1) Continuous collector current at T = 25 C 120 C I A C Continuous collector current at T = 100 C 80 C (2) I Pulsed collector current (t 1 s, T < 175 C) 300 A p J CP Gate-emitter voltage 20 V V GE Transient gate-emitter voltage 30 V (1) Continuous forward current at T = 25 C 120 C I A F Continuous forward current at T = 100 C 80 C (2) I Pulsed forward current (t 1 s, T < 175 C) 300 A p J FP P Total power dissipation at T = 25 C 470 W TOT C T Storage temperature range - 55 to 150 STG C T Operating junction temperature range - 55 to 175 J 1. Current level is limited by bond wires 2. Defined by design, not subject to production test. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case IGBT 0.32 thJC R Thermal resistance junction-case diode 0.66 C/W thJC R Thermal resistance junction-ambient 50 thJA DS9536 - Rev 9 page 2/18